NVTR4503NT1G

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NVTR4503NT1G

MOSFET N-CH 30V 2A SOT23-3

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  • Mfr. Partie #NVTR4503NT1G
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Spécifications

Part Status Active
Base Product Number NVTR4503
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 135 pF @ 15 V
Power Dissipation (Max) 420mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236)
Package TO-236-3, SC-59, SOT-23-3
Packaging Cut Tape (CT), Tape & Reel (TR)

Vue d'ensemble

Description

The NVTR4503NT1G is a general-purpose, N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. It features low on-resistance, fast switching capabilities, and is suitable for power management tasks, including load switching and signal amplification. With a maximum drain-source voltage (V_DS) of 30V and a continuous drain current (I_D) of up to 9.5A, it is ideal for low to medium power applications. The device is packaged in a TO-220 format, which provides effective thermal management and allows for efficient heat dissipation. The NVTR4503NT1G is often used in automotive, industrial, and consumer electronics due to its reliability and performance. Its gate threshold voltage is optimized for low-voltage logic, making it compatible with various control circuits. Overall, the NVTR4503NT1G is a versatile component suitable for modern electronic designs that require efficient power handling and control.

Features

The NVTR4503NT1G is a high-speed, low-voltage N-channel MOSFET designed for various switching applications. Key features include:
1. Voltage Rating: 30V, making it suitable for low-voltage applications.
2. Current Rating: Can handle continuous drain currents up to 10A, providing robust performance in power applications.
3. On-Resistance (R_DS(on)): Low on-resistance (approximately 12 mΩ at VGS = 10V), which reduces power losses and improves efficiency.
4. Gate Threshold Voltage: VGS(th) typically ranges from 1V to 2.5V, allowing for easy interfacing with low-voltage control signals.
5. Package Type: Available in a surface-mount SOT-23 package, ensuring compact design and easy integration into PCBs.
6. Fast Switching Speed: Suitable for high-frequency applications with excellent thermal stability.
7. Applications: Commonly used in DC-DC converters, power management systems, and load switching.
These features make the NVTR4503NT1G a versatile choice for engineers looking for reliable MOSFET solutions in compact designs.

Package

The NVTR4503NT1G is packaged in a surface mount DPAK (TO-252) format. This package type is designed for high-power applications, providing efficient thermal performance and ease of handling for circuit integration.

Pinout

The NVTR4503NT1G is a dual N-channel MOSFET packaged in a SOT-23-3 format. It features a total of 3 pins. The pin configuration and their functions are as follows:
1. Gate 1 (G1): This pin is used to control the first N-channel MOSFET.
2. Source 1 (S1): This is the source pin for the first N-channel MOSFET.
3. Drain 1 (D1): This is the drain pin for the first N-channel MOSFET.
In addition, the second N-channel MOSFET shares the same source and drain pins:
- Source 2 (S2): This pin is connected to the source of the second MOSFET (internally tied to S1).
- Drain 2 (D2): This pin is connected to the drain of the second MOSFET (internally tied to D1).
The device is used in various applications for switching and amplification, providing low on-resistance and fast switching capabilities.

Manufacturer

The NVTR4503NT1G is manufactured by ON Semiconductor, a leading global supplier of semiconductor solutions. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor focuses on designing and manufacturing a wide range of electronic components, including power management, analog, and mixed-signal integrated circuits, as well as discrete components like transistors and diodes. The company serves various markets, including automotive, industrial, and consumer electronics, and is known for its commitment to energy-efficient solutions and innovative technologies.

Application

The NVTR4503NT1G is a dual N-channel MOSFET used in various applications, including power management, battery management systems, and DC-DC converters. Its low on-resistance and fast switching capabilities make it suitable for use in high-efficiency power supplies, LED drivers, and motor control circuits. Additionally, it is utilized in consumer electronics, automotive applications, and industrial power systems for efficient energy conversion and management.

Equivalent

The NVTR4503NT1G is a N-channel MOSFET. Equivalent products include the BSS138, Si2301, and IRLZ44N. When selecting an equivalent, ensure compatibility based on parameters such as voltage, current ratings, and package type. Always verify specific application requirements and characteristics.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

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