NVTFS5826NLWFTWG

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NVTFS5826NLWFTWG

MOSFET N-CH 60V 7.6A 8WDFN

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Spécifications

Supplier onsemi
Package Tape & Reel (TR)
Series Automotive, AEC-Q101
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 7.6A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 24mOhm @ 10A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 16 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 850 pF @ 25 V
PowerDissipation(Max) 3.2W (Ta), 22W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 8-WDFN (3.3x3.3)

Vue d'ensemble

Description

NVTFS5826NLWFTWG is a high-performance N-channel MOSFET designed for various power management applications. It features low on-resistance and fast switching capabilities, making it suitable for use in DC-DC converters, power supplies, and motor drives. The device is manufactured using advanced semiconductor technology to ensure high efficiency and reliability.
Key specifications typically include a maximum drain-source voltage (V_DS), a maximum continuous drain current (I_D), and a low gate threshold voltage (V_GS(th)). The product is available in a compact package, allowing for space-efficient designs. Additionally, it often features a low thermal resistance, enabling better heat dissipation during operation.
This MOSFET is commonly used in consumer electronics, automotive applications, and industrial systems where efficient power management is critical. Proper thermal management and adherence to electrical ratings are essential for optimal performance.

Features

The NVTFS5826NLWFTWG is a N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device supports continuous drain current of up to 57A, which is beneficial for high-power circuits.
3. RDS(on): It offers a low on-resistance (RDS(on)) of approximately 8.5 mΩ at 10V gate-source voltage, minimizing power losses during operation.
4. Gate Threshold Voltage: It has a gate threshold voltage (VGS(th)) ranging from 1V to 2.5V, allowing for efficient operation with lower gate drive voltages.
5. Package: Packaged in a DPAK, it provides ease of mounting and thermal management.
6. Temperature Range: It operates effectively within a wide temperature range, enhancing reliability in various applications.
This MOSFET is ideal for use in power supplies, converters, and motor drivers within consumer electronics and industrial applications.

Package

The NVTFS5826NLWFTWG is packaged in a TSSOP-16 (Thin Shrink Small Outline Package) format, which features a thin profile and space-efficient design, suitable for various applications in electronic circuits.

Pinout

The NVTFS5826NLWFTWG is a N-channel MOSFET designed for power management applications. It features a total of 8 pins. The primary functions of these pins include:
1. Gate (G) - Used to control the MOSFET's switching action.
2. Drain (D) - The terminal through which the main current flows out of the MOSFET.
3. Source (S) - The terminal through which the main current flows into the MOSFET.
The pin configuration commonly follows the standard layout of power MOSFETs, facilitating easy integration into various electronic circuits. The specific capabilities include low on-resistance and high current handling, making it suitable for applications like DC-DC converters and load switching. Always refer to the manufacturer’s datasheet for detailed specifications and electrical characteristics.

Manufacturer

The NVTFS5826NLWFTWG is manufactured by Nexperia, a semiconductor company that specializes in producing discrete, logic, and MOSFET components. Nexperia is known for its high-performance products that are utilized in various applications, including automotive, industrial, and consumer electronics. The company focuses on delivering reliable and efficient solutions, emphasizing quality and innovation in the semiconductor market.

Application

The NVTFS5826NLWFTWG is a low-voltage N-channel MOSFET commonly used in power management applications, including DC-DC converters, power supplies, and load switching. Its features make it suitable for high-efficiency designs in consumer electronics, automotive systems, and industrial equipment. Its low on-resistance and high-speed switching capabilities enhance performance in applications requiring reliable and efficient power control.

Equivalent

The NVTFS5826NLWFTWG is a N-channel MOSFET. Equivalent products include:
1. NVTFS5826NLW
2. SI4825DY
3. BSC090N15NS3
4. IRF3205
Always verify the specific electrical characteristics and package types to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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