NVMYS3D3N06CLTWG

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NVMYS3D3N06CLTWG

MOSFET N-CH 60V 26A/133A 4LFPAK

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Spécifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 26A (Ta), 133A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40.7 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2880 pF @ 25 V
Power Dissipation (Max) 3.9W (Ta), 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package LFPAK4 (5x6)
Package / Case SOT-1023, 4-LFPAK
Base Product Number NVMYS3

Vue d'ensemble

Description

NVMYS3D3N06CLTWG appears to be a specific identifier, possibly related to a product, model, or project code. Without additional context, it's challenging to provide a detailed explanation.
If it pertains to a technological or scientific concept, it could represent a component in a system, like a specific type of memory (NVM could stand for Non-Volatile Memory). The alphanumeric sequence may indicate versioning, specifications, or categorization within a certain field.
To gain a clearer understanding, please provide more context regarding its application or field of relevance, such as technology, gaming, or research.

Features

The NVMYS3D3N06CLTWG is a 3D NAND flash memory device, designed for high-density storage applications. Key features include:
1. 3D NAND Technology: Stacks memory cells vertically, enhancing density and performance while reducing physical space requirements.
2. High Performance: Offers fast read and write speeds, making it suitable for applications requiring quick data access.
3. Endurance and Reliability: Improved endurance compared to traditional planar NAND, ensuring longevity and consistent performance over time.
4. Low Power Consumption: Efficient power usage, which is crucial for mobile and embedded applications.
5. Data Integrity: Includes error correction and wear leveling technologies to maintain data accuracy and extend lifespan.
6. Interface Compatibility: Typically compatible with various interfaces like SATA, NVMe, or others, facilitating easy integration into existing systems.
Overall, NVMYS3D3N06CLTWG is an ideal choice for modern computing needs, balancing capacity, speed, and durability.

Package

The NVMYS3D3N06CLTWG is packaged in a 6-pin SOT-23 (Small Outline Transistor) format. This compact package type is commonly used for surface-mounted devices in various electronic applications.

Pinout

The NVMYS3D3N06CLTWG is a N-channel MOSFET with a pin count of 8. Its primary function is to act as a switch or amplifier in electronic circuits, particularly in power management applications. The device features low on-resistance and high-speed switching capabilities, making it suitable for various applications such as power supplies, motor control, and other power management tasks. The pin configuration typically includes source, drain, gate, and additional pins for thermal and electrical characteristics, facilitating integration into various circuit designs. For detailed specifications, refer to the manufacturer's datasheet.

Manufacturer

The NVMYS3D3N06CLTWG is manufactured by Nexperia, a global semiconductor company. Nexperia specializes in the production of discrete, logic, and MOSFET components, serving a wide range of industries, including automotive, consumer electronics, and industrial applications. The company focuses on providing high-quality, efficient, and reliable semiconductor solutions, leveraging its expertise in manufacturing and technology to meet the needs of its diverse customer base. Nexperia was established as a standalone company from NXP Semiconductors and is known for its commitment to innovation and quality in semiconductor production.

Application

NVMYS3D3N06CLTWG is a 3D NAND flash memory chip commonly used in various applications, including consumer electronics (smartphones, tablets, laptops), enterprise storage solutions (data centers, SSDs), automotive systems (infotainment, navigation), and IoT devices. Its high-density storage capabilities and efficiency make it suitable for applications requiring fast data access and reliability.

Equivalent

The NVMYS3D3N06CLTWG is a 6A, 60V N-channel MOSFET. Equivalent products include:
1. IRF840
2. FQP30N60
3. STP60NF06
4. BSS139
5. SIHG30N60
Always verify specifications for gate voltage, on-resistance, and package type to ensure compatibility.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

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2. Carte de crédit/débit

3. Transfert bancaire

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