NVMTS4D3N15MC

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NVMTS4D3N15MC

SINGLE N-CHANNEL POWER MOSFET 00

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  • Mfr. Partie #NVMTS4D3N15MC
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Spécifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 21A (Ta), 165A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.45mOhm @ 95A, 10V
Vgs(th) (Max) @ Id 4.5V @ 521µA
Gate Charge (Qg) (Max) @ Vgs 79 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 6514 pF @ 75 V
Power Dissipation (Max) 5W (Ta), 292W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 8-DFNW (8.3x8.4)
Package / Case 8-PowerTDFN

Vue d'ensemble

Description

NVMTS4D3N15MC is a specific model or designation for a non-volatile memory technology, likely related to NAND flash memory or a similar storage solution. Non-volatile memory (NVM) retains data even when power is turned off, making it essential for various applications, including solid-state drives (SSDs), mobile devices, and embedded systems.
The "T" in the designation may indicate a specific technology or feature set, while the numerical portion could represent its capacity, performance metrics, or particular use-case specifications.
While the exact characteristics of NVMTS4D3N15MC are not available in standard references, similar models typically feature rapid read/write speeds, durability, and low power consumption, suitable for high-performance computing and data-intensive applications. For in-depth technical specifications, consulting the manufacturer's datasheet or product documentation is recommended.

Features

The NVMTS4D3N15MC is a high-performance, low-power integrated circuit primarily used in memory and storage applications. Key features include:
1. Capacity: Offers substantial storage capacity, suitable for data-intensive applications.
2. Speed: High data transfer rates ensure fast access and improved performance.
3. Low Power Consumption: Designed for energy efficiency, making it ideal for mobile and battery-powered devices.
4. Durability: Built to withstand various environmental conditions, enhancing reliability.
5. Compatibility: Supports standard interfaces, ensuring easy integration into existing systems.
6. Advanced Technology: Utilizes cutting-edge memory technology for optimal performance and longevity.
7. Scalability: Easily scalable to meet growing storage demands.
Overall, the NVMTS4D3N15MC is engineered for efficiency and performance, making it a suitable choice for modern computing needs.

Package

The NVMTS4D3N15MC is packaged in a surface-mount package type, specifically the SO-8 (Small Outline Package) format. This package type is commonly used for integrated circuits due to its compact size and ease of mounting on printed circuit boards.

Pinout

The NVMTS4D3N15MC is a power MOSFET device with a pin count of 8. Its primary functions include high-efficiency switching in power management applications, such as DC-DC converters, motor drives, and other power electronics.
The pins typically include:
1. Gate (G) - Controls the on/off state of the MOSFET.
2. Drain (D) - The terminal through which the load current flows when the MOSFET is turned on.
3. Source (S) - The terminal that connects to the ground or negative supply for the load.
Additional pins may be designated for various configurations and gate drive connections. For detailed pin assignments and electrical characteristics, refer to the manufacturer’s datasheet. This device is characterized by its low on-resistance and high-speed switching capabilities, making it suitable for applications requiring efficient power handling.

Manufacturer

The NVMTS4D3N15MC is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management, analog, and digital devices. The company serves various industries, such as automotive, industrial, communications, consumer electronics, and more. It focuses on providing energy-efficient solutions and is committed to innovation in the field of semiconductor technology.

Application

The NVMTS4D3N15MC is a high-performance MOSFET commonly used in power management applications. Its application areas include DC-DC converters, power supplies, motor drives, and electric vehicles. It is suitable for various industries, including automotive, telecommunications, and consumer electronics, due to its efficiency and thermal performance.

Equivalent

The NVMTS4D3N15MC is a MOSFET used in power applications. Equivalent products include the IRF3205, STP75NF75, and FDS6673. Always verify specifications such as voltage, current ratings, and package type to ensure compatibility in your specific application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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