NVMJST1D6N04CTXG

Les images sont à titre de référence seulement

NVMJST1D6N04CTXG

TRENCH 6 40V LFPAK 5X7

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 314A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.65mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 130µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 25 V
Power Dissipation (Max) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 10-TCPAK
Package / Case 10-PowerLSOP (0.209", 5.30mm Width)
Base Product Number NVMJST1D

Vue d'ensemble

Description

The NVMJST1D6N04CTXG is a high-performance, low-power NAND flash memory device designed for various applications, including mobile devices, consumer electronics, and industrial systems. It typically features a 1 Gb (Gigabit) capacity, offering efficient storage solutions with fast read and write speeds.
This memory chip utilizes the latest NAND technology, ensuring reliable data integrity and endurance, making it suitable for demanding environments. It often supports advanced functionalities such as error correction, wear leveling, and power management to enhance performance and longevity.
Moreover, the NVMJST1D6N04CTXG is designed for easy integration into various systems, featuring standard interfaces that ensure compatibility with different host controllers. This versatility enables manufacturers to utilize the chip in numerous applications while optimizing design and production processes.
Overall, the NVMJST1D6N04CTXG is an essential component in modern electronic devices, providing efficient, reliable, and cost-effective storage solutions.

Features

The NVMJST1D6N04CTXG is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance switching applications. Key features include:
1. Voltage Rating: Typically supports high voltage applications, often around 40V.
2. Current Rating: Handles substantial current, often rated for several amperes, ensuring efficient power delivery.
3. Low R_DS(on): Offers low on-resistance for reduced power loss and increased efficiency during operation.
4. Fast Switching Speed: Designed for rapid switching, which is crucial in applications like DC-DC converters and motor drivers.
5. Thermal Management: Features a robust thermal performance with a suitable package to dissipate heat effectively.
6. Gate Threshold Voltage: Operates at a low gate voltage, enabling compatibility with various drive circuits.
Applications include power management, automotive, and industrial automation systems, where reliability and efficiency are paramount.

Package

The NVMJST1D6N04CTXG is packaged in a 6-ball wafer-level chip scale package (WLCSP). This compact package type is designed for space-constrained applications, providing a small footprint and enabling high-density integration.

Pinout

The NVMJST1D6N04CTXG is a power MOSFET with a total of 6 pins. Its main functions include switching and amplification in various power management applications. Specifically, it is designed for low on-resistance and fast switching capabilities, making it suitable for use in DC-DC converters, power supplies, and motor control applications. The device typically features a compact surface mount package, enhancing thermal performance and reliability.
For precise applications, detailed information regarding pin configuration and electrical characteristics can be found in the manufacturer's datasheet.

Manufacturer

The NVMJST1D6N04CTXG is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, logic, timing, and RF devices, as well as image sensors and microcontrollers. The company primarily serves the automotive, industrial, and communications markets, providing innovative technologies that enable energy efficiency and advanced functionality in electronic systems.

Application

The NVMJST1D6N04CTXG is a high-performance N-channel MOSFET primarily used in power management applications. Its key application areas include DC-DC converters, power supplies, motor drivers, and other switching devices. It is suitable for use in consumer electronics, automotive systems, and renewable energy systems due to its efficiency and thermal performance.

Equivalent

The NVMJST1D6N04CTXG is a N-channel MOSFET. Equivalent products include the IRF540, BSS140, and STP16NF06. Always verify specific parameters like voltage, current ratings, and package type to ensure compatibility for your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire