NVMFS5C645NLWFAFT1G

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NVMFS5C645NLWFAFT1G

MOSFET N-CH 60V 22A 5DFN

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Spécifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 22A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 50 V
Power Dissipation (Max) 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount, Wettable Flank
Supplier Device Package 5-DFNW (4.9x5.9) (8-SOFL-WF)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5

Vue d'ensemble

Description

The NVMFS5C645NLWFAFT1G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency applications. It features a low on-resistance, making it suitable for power management tasks in various electronic devices, including industrial, automotive, and consumer electronics.
Key characteristics include a maximum drain-source voltage of 60V and a continuous drain current rating of around 60A, depending on thermal conditions. Its fast switching capabilities allow for better performance in power conversion and control applications.
The device is packaged in a DPAK (TO-252) package, offering good thermal performance and ease of assembly.
Overall, the NVMFS5C645NLWFAFT1G is ideal for applications requiring reliable switching and high efficiency, such as DC-DC converters, motor drivers, and power supplies. Its design emphasizes robustness and low power losses, making it a popular choice among engineers in the power electronics field.

Features

The NVMFS5C645NLWFAFT1G is an N-channel MOSFET designed for efficient power management applications. Key features include:
1. Low On-Resistance (Rds(on)): This ensures minimal conduction losses, enhancing efficiency in power applications.
2. High Voltage Rating: Capable of handling significant voltage levels, suitable for various high-voltage applications.
3. Fast Switching Speed: Allows for quick transitions, which is essential in high-frequency applications.
4. Thermal Performance: It has good thermal characteristics that support operation over a wide temperature range.
5. Suitable for Logic Level Drive: Can be driven directly from logic-level signals, simplifying circuit designs.
6. Compact Package: Typically offered in a TO-220 or similar package, facilitating ease of integration into designs with limited space.
7. Robust Design: Engineered for durability in demanding environments.
These features make the NVMFS5C645NLWFAFT1G ideal for applications in power supplies, motor control, and other high-efficiency circuits.

Package

The NVMFS5C645NLWFAFT1G is packaged in a PowerPAK SO-8 format, which is a surface-mount package designed for efficient thermal performance and compact size.

Pinout

The NVMFS5C645NLWFAFT1G is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a pin count of 8. It is designed for high-speed switching applications and is typically used in power management circuits, DC-DC converters, and similar applications.
The functions of its pins are as follows:
1. Gate (G) - Controls the switching of the transistor.
2. Drain (D) - The output where the load is connected; current flows out of this pin when the MOSFET is on.
3. Source (S) - The input where the current enters the transistor; it’s usually connected to ground or a lower voltage level.
4. Body Diode - Integrated within the MOSFET, allowing current to flow from drain to source when the MOSFET is off.
These components work together to allow the MOSFET to regulate electrical current effectively, providing a key function in various electronic systems.

Manufacturer

The manufacturer of the NVMFS5C645NLWFAFT1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a broad range of electronic components. Their products include power management solutions, analog and mixed-signal devices, sensors, and various semiconductor technologies used in diverse applications such as automotive, industrial, communications, and consumer electronics. The company aims to provide innovative solutions that enable energy efficiency and enhance performance in electronic systems.

Application

The NVMFS5C645NLWFAFT1G is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, power supply circuits, and motor drivers. Its low RDS(on) and fast switching capabilities make it suitable for efficient power conversion in consumer electronics, automotive applications, and renewable energy systems. Additionally, it can be utilized in load switching and battery management systems.

Equivalent

The NVMFS5C645NLWFAFT1G is a N-channel MOSFET. Equivalent products include the Si4450DY, IRLZ44N, and FDS6910. When selecting an equivalent, ensure to match specifications like voltage, current rating, RDS(on), and package type for optimal performance. Always verify compatibility with your specific application.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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