NVMFS5C460NLWFT1G

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NVMFS5C460NLWFT1G

MOSFET N-CH 40V 5DFN

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  • Mfr. Partie #NVMFS5C460NLWFT1G
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Spécifications

Part Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 78A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 4.5mOhm @ 35A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
Power Dissipation (Max) 3.6W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NVMFS5

Vue d'ensemble

Description

The NVMFS5C460NLWFT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of up to 40A, making it suitable for use in power management systems, motor drives, and other applications requiring robust performance.
This MOSFET is characterized by its low on-resistance (R_DS(on)), which minimizes power loss during operation, and fast switching capabilities, enhancing overall efficiency. The device is housed in a compact package, typically a DPAK or similar, which aids in thermal management and ease of integration into circuit designs.
Key specifications include a maximum gate-source voltage (V_GS) of ±20V and a total gate charge (Q_g) that supports rapid switching rates. The NVMFS5C460NLWFT1G is particularly useful in applications such as DC-DC converters, power supplies, and automotive systems, where reliability and performance are critical.

Features

The NVMFS5C460NLWFT1G is a N-channel MOSFET designed for high-efficiency applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, making it suitable for various power management applications.
2. Current Rating: It can handle continuous drain current up to 55A, providing robust performance in demanding environments.
3. RDS(on): The on-resistance is as low as 4.6 mΩ, facilitating reduced power loss and improved thermal performance.
4. Gate Charge: It has a low gate charge, enhancing switching speed and efficiency in high-frequency applications.
5. Package Type: Packaged in a compact DPAK for efficient thermal dissipation and easy integration into circuits.
6. Applications: Ideal for DC-DC converters, motor drives, and power supplies.
Overall, the NVMFS5C460NLWFT1G is engineered for high-performance power applications, ensuring reliability and efficiency.

Package

The NVMFS5C460NLWFT1G is packaged in a small outline transistor (SOT-23) package type, which is designed for surface-mount applications. This package offers compactness and ease of integration into various electronic circuits.

Pinout

The NVMFS5C460NLWFT1G is a N-channel MOSFET from ON Semiconductor designed for power management applications. It comes in a compact SO-8 package, which has a pin count of 8.
The function of the device includes:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): Connects to the load; current flows from drain to source when the MOSFET is on.
3. Source (S): Connects to the ground or power rail; serves as the return path for current.
4. Body Diode: Internal diode allows current to flow in the reverse direction when the MOSFET is off.
The device is optimized for low on-resistance and fast switching, making it suitable for applications such as power supplies, DC-DC converters, and motor drives. Its thermal performance and efficiency are critical for high-density designs.

Manufacturer

The manufacturer of the NVMFS5C460NLWFT1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and sensor devices. Founded in 1999, the company serves various markets, including automotive, industrial, communications, and consumer electronics. ON Semiconductor is known for its commitment to innovation and sustainability, providing products that support energy efficiency and high-performance applications.

Application

The NVMFS5C460NLWFT1G is a power MOSFET primarily used in applications such as synchronous rectification in power supplies, DC-DC converters, motor drives, and battery management systems. Its low on-resistance and high-speed switching capabilities make it ideal for energy-efficient designs in consumer electronics, automotive systems, and renewable energy applications.

Equivalent

The NVMFS5C460NLWFT1G is an N-channel MOSFET. Equivalent products include the NVMFS5C460NLW, IRLZ44N, BSS123, and the SI4461. Ensure to verify specific parameters like voltage, current ratings, and Rds(on) for compatibility in your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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