NVMFS5C430NLWFT1G

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NVMFS5C430NLWFT1G

MOSFET N-CH 40V 200A 5DFN

  • Fabricant
  • Mfr. Partie #NVMFS5C430NLWFT1G
  • Paquet PowerTDFN-8
  • Fiche de données
  • En stock4875

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Spécifications

Package Tape & Reel (TR)
Series Automotive, AEC-Q101
ProductStatus Discontinued at Digi-Key
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 200A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 1.5mOhm @ 50A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 70 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4300 pF @ 20 V
PowerDissipation(Max) 3.8W (Ta), 110W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Vue d'ensemble

Description

The NVMFS5C430NLWFT1G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for high-efficiency applications, featuring a low on-resistance (RDS(on)) to minimize power loss during operation. This device is particularly suitable for power management and conversion circuits, including synchronous rectification and other applications where high switching speeds are beneficial.
Key characteristics include a maximum drain-source voltage (VDS) of 30V, a continuous drain current (ID) rating of 45A, and a low thermal resistance, making it effective for heat dissipation. Its compact package design contributes to space-saving in electronic circuits.
The NVMFS5C430NLWFT1G is commonly used in power supplies, motor drivers, and automotive applications, where reliability and efficiency are critical. Its performance and versatility make it a popular choice among designers looking to enhance the efficiency of their electronic systems.

Features

The NVMFS5C430NLWFT1G is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-to-source voltage (VDS) of 30V, suitable for low-voltage switching applications.
2. On-Resistance (RDS(on)): Low on-resistance of approximately 5.5 mΩ at a gate voltage of 10V, enhancing efficiency and reducing heat generation.
3. Current Rating: Capable of handling continuous drain currents up to 50A, making it suitable for high-current applications.
4. Fast Switching: Optimized for fast switching speeds, which improves overall performance in switching applications.
5. Thermal Performance: Equipped with a strong thermal performance rating, allowing for reliable operation in various environments.
6. Package: Available in a compact SO-8 package, which aids in space-saving designs and easy PCB integration.
These features make the NVMFS5C430NLWFT1G ideal for applications such as power supplies, DC-DC converters, and motor control circuits.

Package

The NVMFS5C430NLWFT1G is packaged in a DPAK (TO-252) package type. This surface-mount package is designed for power applications, providing efficient thermal performance and space-saving design.

Pinout

The NVMFS5C430NLWFT1G is a N-channel MOSFET from ON Semiconductor. It features a pin count of 8.
The primary functions of this MOSFET include switching and amplification in various applications such as power management, motor control, and DC-DC converters. It is designed for low on-resistance and fast switching speeds, making it suitable for high-efficiency applications.
The pin configuration typically includes:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output terminal where current flows out when the device is on.
3. Source (S) - The input terminal where current flows in.
4. Body (B) - Typically internally connected to the source.
For specific pin assignments and detailed electrical characteristics, refer to the manufacturer's datasheet.

Manufacturer

The NVMFS5C430NLWFT1G is manufactured by ON Semiconductor Corporation. ON Semiconductor is a global supplier of semiconductor-based solutions, specializing in energy-efficient electronics. The company provides a wide range of products, including power management, analog, logic, and discrete devices, which are used in various applications such as automotive, industrial, communications, and consumer electronics. Headquartered in Phoenix, Arizona, ON Semiconductor focuses on sustainable practices and innovation to meet the growing demand for advanced electronic components in an increasingly connected world.

Application

The NVMFS5C430NLWFT1G is a Power MOSFET used in various applications, including power management systems, DC-DC converters, and efficient power supply designs. Its low on-resistance and fast switching capabilities make it suitable for automotive applications, industrial automation, and consumer electronics, particularly in areas that require high efficiency and thermal performance.

Equivalent

The NVMFS5C430NLWFT1G is a N-channel MOSFET. Equivalent products include the NVMFS5C430NL, FDN306P, and NVMFS5C430NLFT1. For specific applications, check the datasheets for parameters like V_DS, I_D, R_DS(on), and package type to ensure compatibility. Always verify with the manufacturer for the best alternative based on your requirements.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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