NVMFS4C01NT1G

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NVMFS4C01NT1G

MOSFET N-CH 30V 49A/319A 5DFN

  • Fabricant
  • Mfr. Partie #NVMFS4C01NT1G
  • Paquet SO-8FL-4
  • Fiche de données
  • En stock2630

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 49A (Ta), 319A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 0.9mOhm @ 30A, 10V
Vgs(th)(Max)@Id 2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 139 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 10144 pF @ 15 V
PowerDissipation(Max) 3.84W (Ta), 161W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Vue d'ensemble

Description

The NVMFS4C01NT1G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications in various electronic devices. It features a low on-resistance (RDS(on)), which helps reduce power loss and improve thermal performance. This component is particularly suitable for high-frequency applications, such as power management systems, DC-DC converters, and motor drivers.
With a maximum VDS (drain-source voltage) of 40V and a continuous drain current of up to 30A, it is capable of handling substantial power loads while maintaining stability. The NVMFS4C01NT1G is packaged in a compact, surface-mount configuration, making it ideal for space-constrained designs. Its robustness and efficiency make it a popular choice in automotive, industrial, and consumer electronics applications, where reliability and performance are critical.
Overall, the NVMFS4C01NT1G is designed to meet the demands of modern electronic systems requiring efficient power management solutions.

Features

The NVMFS4C01NT1G is an N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It supports a maximum drain-source voltage (V_DS) of 100V, making it suitable for high-voltage applications.
2. Current Rating: It can handle continuous drain current (I_D) up to 30A, allowing for efficient power conversion.
3. R_DS(on): It has a low on-resistance, typically around 4.5 mΩ at V_GS = 10V, which reduces power losses during operation.
4. Fast Switching: The device is designed for high-speed switching, making it ideal for applications in power supplies and motor control.
5. Thermal Performance: It features a TO-220 package that enhances heat dissipation, ensuring reliable performance under high loads.
6. Gate Threshold Voltage: V_GS(th) is typically between 1V to 2.5V, allowing for low-voltage drive capability.
These features make the NVMFS4C01NT1G suitable for various applications including DC-DC converters, power inverters, and automotive systems.

Package

The NVMFS4C01NT1G is packaged in a 6-pin TSOP (Thin Small Outline Package) form factor. This package design is commonly used for memory devices, providing a compact footprint suitable for various electronics applications.

Pinout

The NVMFS4C01NT1G is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for applications such as power management and switching. It features a total of 8 pins.
Here are the pin functions:
1. Gate (G): Controls the MOSFET's on/off state.
2. Drain (D): Connects to the load; current flows out from here when the device is on.
3. Source (S): Connects to ground or the negative side of the power supply; current flows in from here when the device is on.
The remaining pins are typically for additional features such as substrate or body diode connections, depending on the specific package and configuration. This device is particularly noted for its low on-resistance and high-speed switching capabilities.

Manufacturer

The NVMFS4C01NT1G is manufactured by ON Semiconductor, a semiconductor company known for its focus on designing and manufacturing a wide range of innovative electronic components. ON Semiconductor specializes in power management, analog, and digital signal processing solutions, as well as high-performance discrete devices, including MOSFETs like the NVMFS4C01NT1G. The company serves various industries, including automotive, industrial, communications, and consumer electronics, with a commitment to sustainability and reducing energy consumption in electronic devices. ON Semiconductor is recognized for its contributions to advancing technology and providing efficient solutions in the semiconductor market.

Application

The NVMFS4C01NT1G is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor drives, and load switching. Its low on-resistance and high-speed switching capabilities make it suitable for energy-efficient designs in consumer electronics, telecommunications, and automotive systems. Additionally, it's used in power supply circuits and battery management systems.

Equivalent

The NVMFS4C01NT1G is a dual N-channel MOSFET. Equivalent products include the BSS123, SI2301, and DMN6018. Ensure to check specifications like voltage, current ratings, and package type for compatibility when considering alternatives.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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