NVMFS3D0P04M8LT1G

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NVMFS3D0P04M8LT1G

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 28A (Ta), 183A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 2.7mOhm @ 30A,10V
Vgs(th)(Max)@Id 2.4V @ 2mA
GateCharge(Qg)(Max)@Vgs 124 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5827 pF @ 20 V
PowerDissipation(Max) 3.9W (Ta), 171W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Vue d'ensemble

Description

It appears that "NVMFS3D0P04M8LT1G" refers to a specific part number for a non-volatile memory device, likely a type of Flash memory or similar technology used in electronics. Non-volatile memory (NVM) retains data even when power is turned off, making it essential for data storage in various applications, including consumer electronics, automotive systems, and industrial applications.
The "3D" in the name may suggest a 3D NAND design, which stacks memory cells vertically to increase storage density and improve performance.
For detailed specifications, performance metrics, and applications of this specific part, checking the manufacturer's datasheet or product documentation is recommended. This information will provide insights into the memory's capacity, speed, endurance, and compatibility with various systems.

Features

The NVMFS3D0P04M8LT1G is a power MOSFET designed for high-performance applications. Key features include:
1. Type: N-channel MOSFET for efficient switching.
2. Voltage Rating: 40V maximum drain-source voltage.
3. Current Rating: Capable of handling up to 70A continuous current.
4. RDS(on): Low on-resistance, typically around 4.5 mΩ, which minimizes conduction losses.
5. Package: Available in a compact surface mount package (DPAK), facilitating easy integration into circuits.
6. Gate Threshold Voltage: Low gate-to-source voltage for easy drive requirements.
7. Fast Switching: Optimized for rapid switching applications, suitable for power management.
8. Thermal Performance: Good thermal characteristics allow for efficient heat dissipation.
This MOSFET is ideal for applications in power supplies, motor control, and other high-efficiency circuits.

Package

The NVMFS3D0P04M8LT1G is packaged in a PowerPAK SO-8 format. This surface-mount package provides efficient thermal performance and is suitable for various applications, including power management and switching.

Pinout

The NVMFS3D0P04M8LT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a total of 5 pins.
Pin Configuration and Functions:
1. Gate (G) - Controls the MOSFET operation. Applying a voltage here allows current to flow between the drain and source.
2. Drain (D) - The terminal through which the current flows out of the MOSFET when it is turned on.
3. Source (S) - The terminal through which the current flows into the MOSFET when it is on.
4. Body Diode (internal) - Not a pin but a crucial part of the MOSFET that provides a path for current when the MOSFET is off.
The device is designed for power management and switching applications, featuring low on-resistance and high-speed switching capabilities, making it suitable for various electronic applications.

Manufacturer

The NVMFS3D0P04M8LT1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products including analog ICs, power management devices, sensors, and discrete components. The company serves various markets such as automotive, industrial, telecommunications, and consumer electronics. With a focus on energy-efficient solutions, ON Semiconductor aims to support the growing demand for sustainable technologies in various applications.

Application

The NVMFS3D0P04M8LT1G is a power MOSFET used in various application areas, including power management, DC-DC converters, battery management systems, and motor drives. Its high efficiency and low on-resistance make it suitable for applications in consumer electronics, industrial automation, and renewable energy systems, such as solar inverters.

Equivalent

The NVMFS3D0P04M8LT1G is an N-channel MOSFET. Equivalent products include the SI2301, BSS123, and BSS138. For applications requiring similar specifications, you may also consider the IRLZ44N or the AO3400, depending on the voltage and current ratings needed. Always verify the specific electrical characteristics and package compatibility before replacement.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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