NVMFD5C466NLT1G

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NVMFD5C466NLT1G

MOSFET 2N-CH 40V 52A S08FL

  • Fabricant
  • Mfr. Partie #NVMFD5C466NLT1G
  • Paquet 8-PowerTDFN
  • Fiche de données
  • En stock2564

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Standard
DraintoSourceVoltage(Vdss) 40V
Current-ContinuousDrain(Id)@25°C 14A (Ta), 52A (Tc)
RdsOn(Max)@IdVgs 7.4mOhm @ 10A, 10V
Vgs(th)(Max)@Id 2.2V @ 30µA
GateCharge(Qg)(Max)@Vgs 7nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 997pF @ 25V
Power-Max 3W (Ta), 40W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case 8-PowerTDFN

Vue d'ensemble

Description

The NVMFD5C466NLT1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications, including power management, switching, and amplification. It features a low on-resistance, which minimizes power loss during operation and enhances efficiency.
Key specifications include a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of up to 40A, and a gate threshold voltage (V_GS(th)) typically ranging from 1V to 3V. This MOSFET is housed in a compact package, making it suitable for space-constrained designs.
Additionally, its fast switching capabilities enable high-frequency applications, making it ideal for use in power supplies, DC-DC converters, and motor drivers. The NVMFD5C466NLT1G is optimized for robust performance, with features that enhance thermal stability and reliability in demanding environments.
Overall, it is valuable for engineers seeking efficient and reliable solutions in electronic circuit design.

Features

The NVMFD5C466NLT1G is a dual N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (Vds) of 60V, making it suitable for various high-voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 30A, providing efficient power handling capabilities.
3. Low Rds(on): Features a low on-resistance (Rds(on)) value, typically around 15 mΩ at a gate-source voltage (Vgs) of 10V, minimizing power loss during operation.
4. Thermal Performance: Offers good thermal stability with a maximum junction temperature (Tj) of 150°C and an appropriate thermal resistance.
5. Package: Available in a compact TO-220 package, allowing for easy mounting and heat dissipation.
6. Fast Switching: Optimized for fast switching speeds, enhancing efficiency in switching applications.
These features make the NVMFD5C466NLT1G suitable for use in power supplies, motor drivers, and other applications requiring efficient switching solutions.

Package

The NVMFD5C466NLT1G is packaged in a DPAK (also known as TO-252) format. This surface-mount package is designed for power applications, offering good thermal performance and efficient space utilization on PCBs.

Pinout

The NVMFD5C466NLT1G is a power MOSFET from ON Semiconductor. It features a total of 8 pins. This device is designed for high-speed switching applications and is commonly used in power management circuits.
The pin functions are as follows:
1. Gate (G): Controls the switching of the MOSFET.
2. Drain (D): The output terminal through which the current flows when the device is turned on.
3. Source (S): The terminal through which the current enters the MOSFET when it is turned on.
The device is optimized for low on-resistance and fast switching speeds, making it suitable for applications such as load switching, power supply circuits, and motor control. It is also packaged in a compact, surface-mount configuration, which aids in space-saving designs.

Manufacturer

The manufacturer of the NVMFD5C466NLT1G is ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, focusing on energy-efficient electronics. The company develops a wide range of products, including power management, analog, logic, timing, interface, discrete, and custom semiconductors. ON Semiconductor serves various industries, including automotive, industrial, communications, and consumer electronics, helping customers to improve their energy efficiency and performance in electronic applications. Founded in 1999, the company has a significant market presence and is known for its commitment to sustainability and innovation in semiconductor technology.

Application

The NVMFD5C466NLT1G is a dual N-channel MOSFET, primarily used in power management applications. Its application areas include DC-DC converters, load switching, power routing, and inrush current limiting in consumer electronics, automotive systems, and industrial equipment. Its low on-resistance and fast switching capabilities make it suitable for efficient power delivery and thermal management in compact designs.

Equivalent

The NVMFD5C466NLT1G is a dual N-channel MOSFET. Equivalent products include:
1. BSS138 - General-purpose N-channel MOSFET.
2. 2N7000 - Small-signal N-channel MOSFET.
3. IRF510 - Power MOSFET with higher ratings.
Always check the specific voltage, current ratings, and package type for compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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