NVMFD5C462NLT1G

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NVMFD5C462NLT1G

MOSFET 2N-CH 40V 84A S08FL

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  • Mfr. Partie #NVMFD5C462NLT1G
  • Paquet SO-8
  • Fiche de données
  • En stock4616

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Standard
DraintoSourceVoltage(Vdss) 40V
Current-ContinuousDrain(Id)@25°C 18A (Ta), 84A (Tc)
RdsOn(Max)@IdVgs 4.7mOhm @ 10A, 10V
Vgs(th)(Max)@Id 2.2V @ 40µA
GateCharge(Qg)(Max)@Vgs 11nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 1300pF @ 25V
Power-Max 3W (Ta), 50W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
Package/Case 8-PowerTDFN

Vue d'ensemble

Description

The NVMFD5C462NLT1G is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for use in various electronic applications, including power management and switching. It features a high voltage rating, low on-resistance, and fast switching capabilities, making it suitable for efficient power conversion and control circuits.
Key specifications include a maximum drain-source voltage (V_DS) of 60V, a continuous drain current (I_D) of 55A, and a maximum power dissipation of around 94W. The device typically exhibits low R_DS(on), which reduces power loss and improves efficiency in applications such as DC-DC converters, motor drivers, and load switching.
The NVMFD5C462NLT1G is housed in a compact TO-220 package, providing effective thermal dissipation. It is well-suited for both consumer electronics and industrial applications, where reliability and performance are critical. Overall, this MOSFET is ideal for engineers looking for high-performance solutions in power electronics.

Features

The NVMFD5C462NLT1G is a N-channel MOSFET designed for various applications including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for medium voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 45A, allowing it to drive significant loads.
3. On-Resistance (R_DS(on)): It boasts a low on-resistance (as low as 10 mΩ at V_GS = 10V), enhancing efficiency and reducing heat generation.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage is between 1V and 3V, facilitating operation with lower gate drive voltages.
5. Package Type: It comes in a DPAK package, which provides good thermal performance and ease of mounting.
6. Fast Switching Speed: The MOSFET is designed for fast switching, making it ideal for high-frequency applications.
Overall, the NVMFD5C462NLT1G is suitable for a variety of power electronics applications due to its robust performance and efficiency.

Package

The NVMFD5C462NLT1G is packaged in a TSOP-6 (Thin Small Outline Package) format. This type of package is designed to save space on printed circuit boards while providing a low profile for surface mounting applications.

Pinout

The NVMFD5C462NLT1G is a dual N-channel MOSFET from ON Semiconductor. It has a total of 8 pins. The function of the device includes acting as a switch to control electronic signals and power in various applications, including power management and load switching.
The pin configuration typically includes the following:
1. Gate (G): Controls the operation of the MOSFET.
2. Drain (D): The output terminal where the load is connected.
3. Source (S): The terminal connected to ground or the negative side of the system.
The device is designed for low R_DS(on) performance, which allows it to handle significant current with minimal power loss. It is suitable for use in various applications such as DC-DC converters, motor drives, and power distribution. Be sure to refer to the manufacturer's datasheet for specific electrical characteristics and detailed pin functions.

Manufacturer

The manufacturer of the NVMFD5C462NLT1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in providing a wide range of energy-efficient solutions and semiconductor components, including analog, digital, and mixed-signal devices. The company serves various industries such as automotive, industrial, telecommunications, consumer electronics, and computing. Headquartered in Phoenix, Arizona, ON Semiconductor focuses on innovation and sustainability, offering products that support energy efficiency and advanced technology applications.

Application

The NVMFD5C462NLT1G is a high-efficiency N-channel MOSFET typically used in power management applications. Its applications include DC-DC converters, power supplies, load switches, and motor control circuits. Its low on-resistance and fast switching capabilities make it suitable for consumer electronics, telecommunications, and automotive systems, enhancing energy efficiency and performance in various electronic devices.

Equivalent

The NVMFD5C462NLT1G is a dual N-channel MOSFET. Equivalent products include the AO3400, BSS138, and FDS6910. However, ensure to check specifications like voltage, current ratings, and package type for compatibility before substitution. Always refer to the manufacturer's datasheets for detailed comparisons.

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