NVH040N65S3F

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NVH040N65S3F

SF3 FRFET AUTO 40MOHM TO-247

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Spécifications

Series SuperFET® III
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id 5V @ 2.1mA
Gate Charge (Qg) (Max) @ Vgs 153 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 5875 pF @ 400 V
Power Dissipation (Max) 446W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Through Hole
Supplier Device Package TO-247-3
Package / Case TO-247-3

Vue d'ensemble

Description

The NVH040N65S3F is a high-voltage N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power applications. It features a voltage rating of 650V and a continuous drain current capacity of 40A, making it suitable for various applications, including power supplies, converters, and motor drives.
Key specifications include low on-resistance, which enhances efficiency by reducing power loss during operation. The device is optimized for high-speed switching, improving performance in hard-switching applications. Its rugged design provides reliable operation in harsh environments.
The NVH040N65S3F is packaged in a TO-247 format, facilitating effective thermal management and easy integration into circuit designs. Overall, its combination of high voltage capability, efficient performance, and robust construction makes it a versatile choice for engineers in the power electronics field.

Features

The NVH040N65S3F is a high-voltage N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: 650V, suitable for high-voltage applications.
2. Continuous Drain Current: 40A, allowing substantial power handling.
3. Low On-Resistance (Rds(on)): Typically around 0.04Ω, which enhances efficiency by reducing power losses during operation.
4. Gate Threshold Voltage (Vgs(th)): Low threshold voltage for enhanced switching capabilities.
5. Fast Switching Speed: Reduces switching losses, making it ideal for high-frequency applications.
6. Robust Package: Available in a TO-247 or other packages for effective thermal management.
7. High Avalanche Rating: Enables reliable operation in adverse conditions.
8. Parasitic Capacitance: Optimized for low gate charge, improving overall efficiency.
9. Applications: Suitable for power converters, motor drives, and industrial equipment.
This MOSFET is ideal for applications requiring high efficiency and reliable performance in demanding environments.

Package

The NVH040N65S3F is housed in a TO-247 package type. This package is commonly used for high-power applications, providing efficient thermal management and robust electrical performance.

Pinout

The NVH040N65S3F is a high-voltage N-channel MOSFET with a pin count of 4. Its pin configuration typically consists of:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal where the load is connected.
3. Source (S) - The terminal connected to the ground or negative side of the circuit.
4. Tab - Often used for heat dissipation and may be connected to the source.
This device is designed for high-efficiency applications in power electronics, particularly in switching power supplies and motor drives, operating at a maximum voltage of 650V and a continuous drain current up to 40A. The NVH040N65S3F aims to provide low on-resistance and fast switching capabilities, making it suitable for demanding applications.

Manufacturer

The NVH040N65S3F is manufactured by ON Semiconductor, a global semiconductor company based in Phoenix, Arizona. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and logic devices. The company serves various markets, including automotive, industrial, and consumer electronics. ON Semiconductor is known for its focus on energy-efficient solutions and innovative technologies, positioning itself as a key player in the semiconductor industry.

Application

The NVH040N65S3F is a high-voltage N-channel MOSFET primarily used in power management applications. Its application areas include automotive power systems, industrial power supplies, motor drives, and renewable energy systems such as solar inverters. Additionally, it is suitable for switching applications in consumer electronics and telecom equipment, where efficiency and thermal performance are crucial.

Equivalent

The NVH040N65S3F is a N-channel MOSFET from ON Semiconductor. Equivalent products include the Infineon IPB65R040P4, Fairchild FQD40N65, and STMicroelectronics STP40NF65. Ensure compatibility in specifications such as voltage rating, current handling, and R_DS(on) when selecting alternatives.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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