NVGS3443T1G

Les images sont à titre de référence seulement

NVGS3443T1G

MOSFET P-CH 20V 3.1A 6TSOP

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Obsolete
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 3.1A (Ta)
RdsOn(Max)@IdVgs 65mOhm @ 4.4A, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 15 nC @ 4.5 V
InputCapacitance(Ciss)(Max)@Vds 565 pF @ 5 V
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 6-TSOP

Vue d'ensemble

Description

The NVGS3443T1G is a high-performance, low-voltage, quad operational amplifier designed for various analog signal processing applications. It features a low supply voltage operation, typically ranging from 2.7V to 5.5V, making it suitable for battery-powered devices. The device offers excellent speed and precision, with a slew rate of 0.5 V/μs and a bandwidth of up to several MHz, enabling it to handle a wide range of frequencies.
The NVGS3443T1G is known for its low noise performance, high input impedance, and low output impedance, making it ideal for applications in audio systems, sensors, and instrumentation. It comes in a compact package, ensuring efficient use of board space. Additionally, the device is designed with thermal stability in mind, reducing the risk of distortion or degradation under varying temperatures. Overall, the NVGS3443T1G is a versatile choice for engineers looking to implement reliable and efficient analog signal processing in their designs.

Features

The NVGS3443T1G is a low-voltage, high-performance N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: Supports a drain-source voltage (V_DS) up to 30V.
2. Current Rating: Capable of handling continuous drain currents (I_D) up to 25A.
3. R_DS(on): Low on-resistance, typically around 12 mΩ, which reduces power loss and improves efficiency.
4. Fast Switching: Designed for high-speed switching applications, enhancing overall system responsiveness.
5. Thermal Performance: Offers good thermal stability with a low thermal resistance, ensuring effective heat dissipation.
6. Package Type: Available in a surface-mount SOIC-8 package, suitable for compact designs.
7. Gate Threshold Voltage: Features a low gate threshold, enabling operation with lower gate drive voltages.
These characteristics make the NVGS3443T1G ideal for use in DC-DC converters, power switching applications, and other electronic circuits requiring efficient power management.

Package

The NVGS3443T1G is packaged in a 6-pin SOT-23 surface-mount package.

Pinout

The NVGS3443T1G is a dual N-channel MOSFET with a pin count of 8. It is designed for various applications, including power management and switching.
The pin configuration is as follows:
1. Gate 1 (G1) - Control for the first N-channel MOSFET.
2. Drain 1 (D1) - Drain terminal for the first N-channel MOSFET.
3. Source 1 (S1) - Source terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Control for the second N-channel MOSFET.
5. Drain 2 (D2) - Drain terminal for the second N-channel MOSFET.
6. Source 2 (S2) - Source terminal for the second N-channel MOSFET.
7. Drain 1 (D1) - Common drain for both MOSFETs.
8. Source 2 (S2) - Common source for both MOSFETs.
Both MOSFETs can be used in high-side and low-side switching applications, allowing efficient current flow control in various electronic circuits.

Manufacturer

The NVGS3443T1G is manufactured by ON Semiconductor, a company known for its semiconductor solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, and mixed-signal devices, as well as sensors and connectivity solutions for various applications such as automotive, industrial, and consumer electronics. The company focuses on energy-efficient innovations and is recognized for its commitment to sustainability and performance in the semiconductor industry.

Application

The NVGS3443T1G is a dual N-channel MOSFET commonly used in applications such as power management, battery management systems, motor control, load switching, and DC-DC converters. Its low on-resistance and fast switching capabilities make it suitable for efficient energy conversion and control in consumer electronics, automotive systems, and industrial applications.

Equivalent

The NVGS3443T1G is a low-voltage N-channel MOSFET. Equivalent products include the AO3400, BSS138, and IRLZ44N. Ensure to check specifications such as voltage, current rating, and RDS(on) to confirm compatibility for your specific application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire