NVB110N65S3F

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NVB110N65S3F

SINGLE N-CHANNEL POWER MOSFET SU

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  • Mfr. Partie #NVB110N65S3F
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Spécifications

Package Bulk
Series FRFET®, SuperFET® III
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 30A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 110mOhm @ 15A, 10V
Vgs(th)(Max)@Id 5V @ 3mA
GateCharge(Qg)(Max)@Vgs 58 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 2560 pF @ 400 V
PowerDissipation(Max) 240W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK-3 (TO-263-3)

Vue d'ensemble

Description

The NVB110N65S3F is a high-performance N-channel MOSFET designed for power management applications. With a voltage rating of 650V and a continuous drain current of 110A, it is suitable for various high-voltage switching applications such as power supplies, motor drives, and inverters. The device features low on-resistance (R DS(on)) to minimize conduction losses, enhancing efficiency in power conversion processes.
It is built using advanced semiconductor technology that ensures fast switching speeds and improved thermal performance, making it ideal for high-frequency applications. The NVB110N65S3F also includes a robust avalanche rating, which provides additional reliability under transient conditions.
The package typically used for this MOSFET is a TO-220 or similar, allowing for effective heat dissipation. Overall, this component is well-suited for applications requiring high efficiency, reliability, and performance in power electronics.

Features

The NVB110N65S3F is a high-performance N-channel MOSFET designed for various applications, including power switching and grid-tied inverters. Key features include:
1. Voltage Rating: 650V, allowing for high-voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 110A.
3. Low RDS(on): Offers low on-resistance (typically around 0.110 ohms), which enhances efficiency and reduces power losses.
4. Fast Switching: Designed for fast switching speeds, making it suitable for high-frequency applications.
5. Thermal Performance: Robust thermal characteristics enable better heat dissipation and reliability.
6. Package Type: Typically available in TO-220 or DPAK packages, facilitating easy integration into circuit designs.
These characteristics make the NVB110N65S3F an excellent choice for power management solutions in renewable energy systems, motor drives, and industrial applications.

Package

The NVB110N65S3F is packaged in a TO-220 format. This type of package is commonly used for power devices, providing efficient heat dissipation and ease of mounting to heatsinks.

Pinout

The NVB110N65S3F is an N-channel power MOSFET from ON Semiconductor, designed for high-efficiency applications. It features a TO-220 package with three pins. The pin count and their functions are as follows:
1. Gate (G): This pin is used to control the MOSFET. Applying a voltage to the gate allows current to flow between the drain and source.

2. Drain (D): The drain pin is where the output current flows out when the MOSFET is turned on.

3. Source (S): The source pin is the terminal through which the input current enters the MOSFET.
The NVB110N65S3F has a maximum drain-source voltage (V_DS) of 650V and a continuous drain current (I_D) of up to 110A, making it suitable for various power conversion applications, including inverters and motor drivers.

Manufacturer

The NVB110N65S3F is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in producing a wide range of semiconductor components, including power management, analog, and digital solutions. The company serves various markets, including automotive, industrial, communication, and consumer electronics. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor focuses on enabling energy-efficient electronics and providing innovative technologies to support a sustainable future.

Application

The NVB110N65S3F is a 650V N-channel MOSFET primarily used in power electronics applications such as switch-mode power supplies (SMPS), motor drives, and renewable energy systems. Its high efficiency and fast switching capabilities make it suitable for applications in electric vehicles, industrial automation, and LED lighting. Additionally, it can be utilized in DC-DC converters and inverters for improved performance in power management solutions.

Equivalent

The NVB110N65S3F is an N-channel MOSFET commonly used in power applications. Equivalent products include the Infineon IPP110N65P4, STMicroelectronics STP110N65M5, and ON Semiconductor NTP110N65. When looking for equivalents, ensure similar specifications such as voltage rating, current rating, R_DS(on), and package type. Always verify compatibility for your specific application.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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