NVB082N65S3F

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NVB082N65S3F

MOSFET N-CH 650V 40A D2PAK-3

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101, SuperFET® III, FRFET®
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 650 V
Current-ContinuousDrain(Id)@25°C 40A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 82mOhm @ 20A, 10V
Vgs(th)(Max)@Id 5V @ 4mA
GateCharge(Qg)(Max)@Vgs 81 nC @ 10 V
Vgs(Max) ±30V
InputCapacitance(Ciss)(Max)@Vds 3410 pF @ 400 V
PowerDissipation(Max) 313W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK-3 (TO-263-3)

Vue d'ensemble

Description

The NVB082N65S3F is a high-performance N-channel MOSFET designed for power switching applications. It features a maximum drain-source voltage (Vds) of 650V and a continuous drain current (Id) rating of 82A, making it suitable for high-voltage and high-current applications. Its low on-resistance (Rds(on)) minimizes conduction losses, enhancing efficiency in power conversion and amplification.
This MOSFET is typically used in applications such as power supplies, motor drives, and inverters due to its robust performance characteristics. It is housed in a TO-220 package, allowing for effective heat dissipation. The device is also designed to handle fast switching speeds, making it ideal for high-frequency applications.
Overall, the NVB082N65S3F is a versatile component in modern electronic designs, providing reliability and efficiency for demanding power applications.

Features

The NVB082N65S3F is an N-channel MOSFET designed for high-efficiency power switching applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (V_DS) of 650V, making it suitable for high-voltage applications.
2. Current Rating: It supports a continuous drain current (I_D) of up to 82A, allowing it to handle substantial loads.
3. R_DS(on): It boasts a low on-resistance, improving efficiency and reducing heat generation during operation.
4. Gate Threshold Voltage: Features a low gate threshold voltage, ensuring easy drive in various circuits.
5. Package Type: Available in a TO-220 package, promoting effective thermal management and heat dissipation.
6. Applications: Ideal for use in power supplies, motor drives, and other high-power applications requiring efficient switching.
Overall, the NVB082N65S3F is engineered for robustness and performance in demanding environments.

Package

The NVB082N65S3F is packaged in a TO-247 format, which is a power semiconductor package designed for high voltage and current applications. This package type provides efficient heat dissipation and robust electrical performance.

Pinout

The NVB082N65S3F is a N-channel MOSFET designed for high-voltage applications. It features a total of 8 pins. The pin configuration typically includes:
1. Gate (G): Controls the MOSFET turning on/off.
2. Drain (D): The output where current flows out of the MOSFET.
3. Source (S): The input where current flows into the MOSFET.
The specific functions of these pins are as follows:
- Gate (G): Voltage applied here controls the conduction state.
- Drain (D): Connects to the load, carrying the current when the MOSFET is on.
- Source (S): Connected to the ground in a common-source configuration.
The NVB082N65S3F is rated for 650V and has low on-resistance, making it suitable for applications such as power conversion and motor control. Always refer to the manufacturer's datasheet for detailed specifications and pin assignments.

Manufacturer

The NVB082N65S3F is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in providing a wide range of semiconductor solutions, including power management, analog, and digital products. The company serves various markets, including automotive, industrial, and consumer electronics, and is known for its focus on energy efficiency and sustainability in its product offerings. Founded in 1999, ON Semiconductor has grown through strategic acquisitions and innovation, making it a significant player in the semiconductor industry.

Application

The NVB082N65S3F is a 650V N-channel MOSFET primarily used in applications such as power supplies, motor drives, and industrial equipment. It is suitable for high-efficiency switching applications, including resonant converters, solar inverters, and electric vehicles due to its low on-resistance and fast switching capabilities.

Equivalent

The NVB082N65S3F is a 650V N-channel MOSFET. Equivalent products include the Infineon IPP65R065C6, STMicroelectronics STP65N65M5, and ON Semiconductor NTM065N65M5. Always verify specifications such as RDS(on), gate threshold voltage, and total gate charge for precise replacements.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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