NUP4201DR2G

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NUP4201DR2G

TVS DIODE 5VWM 25VC 8-SOIC

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Spécifications

Part Status Active
Base Product Number NUP4201
Type Steering (Rail to Rail)
Voltage - Reverse Standoff (Typ) 5V
Voltage - Breakdown (Min) 6V
Voltage - Clamping (Max) @ Ipp 25V
Current - Peak Pulse (10/1000µs) 25A (8/20µs)
Power - Peak Pulse 500W
Power Line Protection Yes
Applications General Purpose
Capacitance @ Frequency 5pF @ 1MHz
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package 8-SOIC
Packaging Cut Tape (CT), Tape & Reel (TR)
Unidirectional Channels 4

Vue d'ensemble

Description

The NUP4201DR2G is a dual N-channel MOSFET designed for low-voltage, high-speed switching applications. It features a low on-resistance (R_DS(on)) to minimize power loss and improve efficiency in power management systems. The device is housed in a compact surface-mount package (SOT-23), making it suitable for space-constrained designs.
This MOSFET is optimized for applications such as load switching, power management circuits, and DC-DC converters. Its maximum drain-source voltage (V_DS) rating typically ranges around 20V, and it can handle significant continuous drain current (I_D) levels, making it versatile for various electronic applications.
The NUP4201DR2G is designed with fast switching capabilities, enhancing performance in high-frequency circuits. It often features ESD protection, ensuring reliability and durability in real-world conditions. Overall, it is a reliable choice for engineers looking to implement efficient and compact solutions in their electronic designs.

Features

The NUP4201DR2G is a single N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, suitable for various consumer electronics.
2. Current Rating: It supports a continuous drain current (I_D) of up to 6.5A, allowing for efficient power management.
3. R_DS(on): Low on-resistance of approximately 22 mΩ at V_GS = 10V, ensuring minimal power loss during operation.
4. Gate Threshold Voltage: Gate threshold (V_GS(th)) ranges from 1V to 2.5V, enabling operation with low control voltages.
5. Package Type: Available in a compact SOT-23 package, which is suitable for space-constrained applications.
6. High Speed: Fast switching speeds, making it suitable for applications like switching regulators and power management.
7. RoHS Compliant: The device complies with RoHS standards, ensuring environmental safety.
These features make the NUP4201DR2G ideal for applications in power management, battery switching, and low-voltage drives.

Package

The NUP4201DR2G is packaged in a small Surface-Mount Device (SMD) type called the SO-8. This package is designed for easy mounting on printed circuit boards, offering a compact solution for various electronic applications.

Pinout

The NUP4201DR2G is a dual N-channel MOSFET from ON Semiconductor, specifically designed for low-voltage applications. It features a total of 8 pins. The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Source 1 (S1) - Source terminal for the first N-channel MOSFET.
3. Drain 1 (D1) - Drain terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Source 2 (S2) - Source terminal for the second N-channel MOSFET.
6. Drain 2 (D2) - Drain terminal for the second N-channel MOSFET.
7. Common Source (CS) - Connects to the source terminals of both MOSFETs.
8. Common Drain (CD) - Connects to the drain terminals of both MOSFETs.
This component is used in applications such as power management, load switch, and signal switching, providing efficient performance in compact designs.

Manufacturer

The NUP4201DR2G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components and solutions, including power management, analog, discrete, and logic devices. The company primarily serves various industries, including automotive, industrial, communications, and consumer electronics. With a focus on innovation and sustainability, ON Semiconductor aims to provide energy-efficient solutions that meet the evolving needs of modern technology.

Application

The NUP4201DR2G is a dual N-channel MOSFET designed for various applications, including power management, load switching, and signal switching in consumer electronics, industrial equipment, and automotive systems. Its low on-resistance and fast switching capabilities make it suitable for battery-powered devices, DC-DC converters, and motor control applications.

Equivalent

The NUP4201DR2G is a dual-channel, low-voltage, general-purpose analog switch. Equivalent products include:
1. ADF7021
2. TSX-1
3. MAX4627
4. DG441
5. ADG884
Always check the specific datasheets for compatibility in terms of voltage, current, and switching characteristics.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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