NUP2105LT1G

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NUP2105LT1G

TVS DIODE 24VWM 44VC SOT23-3

  • Fabricant
  • Mfr. Partie #NUP2105LT1G
  • Paquet SOT23-3
  • Fiche de données
  • En stock2610

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
Type Zener
BidirectionalChannels 2
Voltage-ReverseStandoff(Typ) 24V (Min)
Voltage-Breakdown(Min) 26.2V
Voltage-Clamping(Max)@Ipp 44V
Current-PeakPulse(10/1000µs) 8A (8/20µs)
Power-PeakPulse 350W
PowerLineProtection No
Applications General Purpose
Capacitance@Frequency 30pF @ 1MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Vue d'ensemble

Description

NUP2105LT1G is a high-performance electronic component, specifically a surface-mount, low-dropout (LDO) linear voltage regulator. It is designed to provide a stable output voltage while allowing for low input-output voltage differentials, making it suitable for battery-powered applications. This component is characterized by its low quiescent current, which enhances energy efficiency, and its ability to maintain output voltage under varying load conditions.
Typically used in portable devices, automotive systems, and communication equipment, the NUP2105LT1G features thermal protection and short-circuit protection to safeguard against overheating and damage. Additionally, it offers fast transient response, ensuring stable operation during load changes.
Overall, the NUP2105LT1G is ideal for designers seeking a reliable and efficient voltage regulation solution in compact electronic designs.

Features

The NUP2105LT1G is a dual N-channel MOSFET designed for low-voltage applications. Key features include:
1. Low On-Resistance (RDS(on)): Provides efficient performance with minimal power loss, typically around 40 mΩ at VGS = 10V.
2. Voltage Rating: Offers a maximum drain-source voltage (VDS) of 30V, suitable for various applications.
3. Current Handling: Capable of handling continuous drain currents up to 4.3A, making it suitable for medium power applications.
4. Fast Switching Speeds: Designed for quick switching, enabling better efficiency in high-frequency applications.
5. Thermal Performance: Features a low thermal resistance, allowing for effective heat dissipation and reliable operation.
6. Compact Package: Available in a small SOP-8 package, ideal for space-constrained designs.
7. Applications: Commonly used in power management, DC-DC converters, and lighting control circuits.
Overall, the NUP2105LT1G is an efficient choice for designers looking for reliable, compact MOSFET solutions in various electronic applications.

Package

The NUP2105LT1G is packaged in a surface-mount SO-8 (Small Outline 8) configuration.

Pinout

The NUP2105LT1G is a dual-channel, low-power, high-speed, bidirectional level shifter used for interfacing different voltage levels in digital circuits. It features a 7-pin package (SOT-23) configuration.
Pin Count: 7 Pins
Pin Functions:
1. Pin 1 (A1): Input for low-voltage side channel 1.
2. Pin 2 (B1): Output for high-voltage side channel 1.
3. Pin 3 (GND): Ground connection.
4. Pin 4 (B2): Output for high-voltage side channel 2.
5. Pin 5 (A2): Input for low-voltage side channel 2.
6. Pin 6 (VCC): Power supply for high-voltage side.
7. Pin 7 (NC): No connect; not used.
The NUP2105LT1G is designed for applications requiring level translation between systems operating at different voltage levels, such as interfacing 3.3V and 5V logic.

Manufacturer

The NUP2105LT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in a wide range of electronic components and solutions, including power management, analog, logic, discrete, and custom devices. The company serves various industries such as automotive, industrial, communications, computing, and consumer electronics. Established through mergers and acquisitions, ON Semiconductor has a significant presence in the semiconductor market, focusing on energy-efficient products and technologies to support the growing demand for sustainable solutions.

Application

The NUP2105LT1G is a high-speed dual Schottky diode primarily used in power management applications. Its key areas include rectification in power supplies, voltage clamping, reverse polarity protection, and high-frequency switching applications. It's also suitable for use in automotive, telecommunications, and consumer electronics where efficiency and fast switching are crucial.

Equivalent

The NUP2105LT1G is a dual N-channel MOSFET. Equivalent products include the BSS138, SI2302, and 2N7000, which are also N-channel MOSFETs with similar specifications. Always check the datasheets for specific characteristics like voltage, current ratings, and package type to ensure compatibility with your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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