NTZD3154NT1G

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NTZD3154NT1G

MOSFET 2N-CH 20V 540MA SOT563

  • Fabricant
  • Mfr. Partie #NTZD3154NT1G
  • Paquet SOT-563
  • Fiche de données
  • En stock2267

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Standard
DraintoSourceVoltage(Vdss) 20V
Current-ContinuousDrain(Id)@25°C 540mA
RdsOn(Max)@IdVgs 550mOhm @ 540mA, 4.5V
Vgs(th)(Max)@Id 1V @ 250µA
GateCharge(Qg)(Max)@Vgs 2.5nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 150pF @ 16V
Power-Max 250mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case SOT-563, SOT-666

Vue d'ensemble

Description

NTZD3154NT1G is a part of the NTZ series, which typically includes a range of electronic components such as transistors or diodes. Specifically, NTZD3154NT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications in power management and switching. It features low on-resistance, high-speed operation, and is suited for high-efficiency power conversion, including use in power supplies, motor drives, and other electronic applications.
The "NT1G" suffix indicates that the device is packaged in a specific form factor and is available in a quantity of 1000 pieces per reel, making it ideal for automated assembly processes. Key specifications often include maximum voltage ratings, current handling capabilities, and thermal characteristics, which are critical for ensuring reliable operation in intended applications.
For detailed electrical characteristics and application guidelines, it's advisable to consult the manufacturer's datasheet.

Features

The NTZD3154NT1G is a N-channel MOSFET designed for high-performance switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (I_D) of up to 54A, offering high current capacity.
3. On-Resistance: It features a low R_DS(on) of approximately 10 mΩ at V_GS = 10V, which minimizes conduction losses.
4. Fast Switching: The MOSFET provides rapid switching capabilities, enhancing efficiency in power management applications.
5. Thermal Performance: It comes in a SO-8 package, facilitating effective heat dissipation and compact design.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is low, typically ranging between 1.0V to 3.0V, allowing for easy drive from microcontrollers.
This combination of features makes the NTZD3154NT1G ideal for use in power supplies, motor drivers, and other high-efficiency applications.

Package

The NTZD3154NT1G is packaged in a SOT-23 style, which is a small, surface-mount package commonly used for transistors and diodes. This package type is designed for efficient thermal performance and space-saving in electronic circuits.

Pinout

The NTZD3154NT1G is a dual N-channel MOSFET with a pin count of 8. It features two separate MOSFETs in a single package, designed for low voltage and high-speed switching applications.
Pin Functions:
1. Gate 1 (G1): Controls the switching of the first N-channel MOSFET.
2. Drain 1 (D1): The drain terminal for the first N-channel MOSFET.
3. Source 1 (S1): The source terminal for the first N-channel MOSFET.
4. Gate 2 (G2): Controls the switching of the second N-channel MOSFET.
5. Drain 2 (D2): The drain terminal for the second N-channel MOSFET.
6. Source 2 (S2): The source terminal for the second N-channel MOSFET.
7. Drain 3 (D1/D2 shared): Common drain for both MOSFETs (in some configurations).
8. Source 3 (S1/S2 shared): Common source for both MOSFETs (in some configurations).
This device is suitable for applications such as DC-DC converters and load switching.

Manufacturer

The NTZD3154NT1G is manufactured by ON Semiconductor Corporation. ON Semiconductor is a global supplier of semiconductor-based solutions, providing a wide range of products including power and signal management, logic, analog, and discrete components. The company focuses on serving various markets such as automotive, industrial, communications, and consumer electronics. With a strong emphasis on energy efficiency and sustainability, ON Semiconductor aims to innovate and deliver technology that enhances the performance and reliability of electronic systems.

Application

The NTZD3154NT1G is a dual N-channel MOSFET designed for various applications, including power management, DC-DC converters, battery management systems, and motor control. Its low on-resistance and fast switching capabilities make it suitable for use in portable devices, consumer electronics, and automotive applications, where efficient power delivery and thermal management are critical.

Equivalent

The NTZD3154NT1G is a dual N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170, which share similar specifications in terms of voltage and current ratings. For specific applications, check datasheets for characteristics like R_DS(on), V_GS(th), and package type to ensure compatibility.

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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