NTS4409NT1G

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NTS4409NT1G

MOSFET N-CH 25V 700MA SC70-3

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Spécifications

Part Status Active
Base Product Number NTS4409
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 25 V
Current - Continuous Drain (Id) @ 25°C 700mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 4.5V
Rds On (Max) @ Id, Vgs 350mOhm @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 1.5 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 10 V
Power Dissipation (Max) 280mW (Tj)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package SC-70-3 (SOT323)
Package SC-70, SOT-323
Packaging Cut Tape (CT), Tape & Reel (TR)

Vue d'ensemble

Description

The NTS4409NT1G is a high-performance, low-noise, dual N-channel MOSFET designed for applications requiring efficient power management and switching capabilities. It features low on-resistance and fast switching speeds, making it suitable for various uses, including power amplifiers, converters, and motor drivers. The device is housed in a compact SOT-23 package, which allows for space-saving on PCBs and enhances thermal performance. With a maximum drain-source voltage of 30V and a continuous drain current rating of 4.3A, it can effectively handle moderate power levels in electronic circuits. The NTS4409NT1G is ideal for battery-powered devices and applications requiring high efficiency and reliability. It is essential to consult the manufacturer's datasheet for detailed specifications, thermal characteristics, and application guidelines to ensure optimal performance in specific use cases.

Features

The NTS4409NT1G is a high-performance N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: Supports drain-source voltage (VDS) of up to 30V, suitable for various low-voltage applications.
2. Current Rating: Capable of handling continuous drain current (ID) up to 9.3A, enabling efficient power delivery.
3. RDS(on): Low on-resistance of approximately 0.045 ohms at a gate-source voltage (VGS) of 10V, ensuring minimal power loss and heat generation.
4. Gate Threshold Voltage: VGS(th) typically ranges from 1V to 2.5V, suitable for driving with low voltage logic levels.
5. Fast Switching: Designed for efficient switching operations, making it suitable for high-frequency applications.
6. Package: Available in the DPAK package, facilitating easy integration into circuit designs while providing good thermal performance.
These features make the NTS4409NT1G ideal for applications such as DC-DC converters, motor control, and load switching.

Package

The NTS4409NT1G is packaged in the SOT-23 (Small Outline Transistor) package type.

Pinout

The NTS4409NT1G is a dual N-channel MOSFET with a total of 8 pins. Its primary function is to serve as a switch or amplifier in electronic circuits, particularly useful in applications like power management and load switching. Each MOSFET can handle high current and voltage, making it suitable for various tasks in power electronics.
The pin configuration typically includes:
1. Gate (G) - Control terminal for each MOSFET (2 pins).
2. Drain (D) - Output terminal for current flow (2 pins).
3. Source (S) - Ground or common terminal for the MOSFET (2 pins).
4. Common connection (2 pins) - This may include thermal and mechanical ground connections or help with stability.
For detailed specifications, such as maximum current, voltage ratings, and thermal characteristics, refer to the manufacturer's datasheet.

Manufacturer

The NTS4409NT1G is manufactured by ON Semiconductor, a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components. ON Semiconductor provides products for various applications, including automotive, industrial, consumer electronics, and telecommunications. The company focuses on energy-efficient solutions and offers a portfolio that includes analog, logic, discrete, and power management devices. With a strong commitment to innovation and sustainability, ON Semiconductor plays a significant role in advancing technology across multiple sectors.

Application

The NTS4409NT1G is a N-channel MOSFET used in various applications, including power management, DC-DC converters, motor drivers, and switching power supplies. Its low on-resistance and high-speed switching capabilities make it suitable for automotive, industrial, and consumer electronics applications, particularly in efficient power distribution and control circuits.

Equivalent

The NTS4409NT1G is a dual N-channel MOSFET. Equivalent products include the BSS138, SI2302, and IRF730. It's important to verify specifications such as threshold voltage, current rating, and package type before substituting any MOSFET. Always consult the datasheet to ensure compatibility with your application.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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