NTMFS6H818NT1G

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NTMFS6H818NT1G

MOSFET N-CH 80V 20A/123A 5DFN

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  • Mfr. Partie #NTMFS6H818NT1G
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Spécifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 20A (Ta), 123A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 3.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 190µA
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3100 pF @ 40 V
Power Dissipation (Max) 3.8W (Ta), 136W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads
Base Product Number NTMFS6

Vue d'ensemble

Description

The NTMFS6H818NT1G is an N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by ON Semiconductor. It features a high voltage rating of 60V and a low RDS(on) (drain-source on-resistance) of approximately 8.1 mΩ, which enables efficient power management with minimal energy loss. This MOSFET is designed for applications such as power management, DC-DC converters, and other switching applications where high efficiency and thermal performance are critical.
The device typically comes in a surface-mount package (DPAK), facilitating easy integration into various electronic circuits. Its fast switching speeds and robust thermal performance make it suitable for both consumer electronics and industrial applications. The NTMFS6H818NT1G also offers features such as a low gate threshold voltage, enabling operation with lower drive levels, and high reliability under different operating conditions. Overall, this component is an excellent choice for engineers seeking reliable and efficient power solutions.

Features

The NTMFS6H818NT1G is an N-channel MOSFET designed for high-efficiency power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle continuous drain currents (I_D) up to 60A, providing robust performance in power delivery.
3. Low On-Resistance: With a maximum R_DS(on) of 6.5 mΩ at V_GS = 10V, it ensures minimal power loss and heat generation during operation.
4. Fast Switching: Designed for rapid switching applications, it enhances efficiency in converters and other circuits.
5. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for easy driving with lower gate voltages.
6. Package: Typically comes in a TO-220 or similar package for easy mounting and heat dissipation.
These features make the NTMFS6H818NT1G suitable for applications such as power supplies, motor control, and DC-DC converters.

Package

The NTMFS6H818NT1G is packaged in a TO-220 form factor. This package type is designed for efficient heat dissipation and is commonly used for power MOSFET applications.

Pinout

The NTMFS6H818NT1G is a N-channel MOSFET with a pin count of 8. It is designed for high-efficiency power switching applications. The primary function of this MOSFET is to act as a switch that can control the flow of electrical current in various electronic circuits.
The pinout typically includes:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The output terminal where current flows out.
3. Source (S) - The input terminal where current flows in.
4. Body Diode - Integrated for reverse current conduction.
Other pins may include pins for package mounting or thermal dissipation.
Key features include low on-resistance, high-speed switching capabilities, and suitability for applications such as DC-DC converters, motor drives, and power management systems. Always refer to the specific datasheet for precise details on pin configuration and electrical characteristics.

Manufacturer

The manufacturer of the NTMFS6H818NT1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that designs, manufactures, and markets a wide range of electronic components, including discrete components, analog ICs, and power management solutions. The company serves various industries, including automotive, industrial, and consumer electronics. It focuses on providing energy-efficient products and solutions to meet the growing demand for efficient power management and connectivity in a wide range of applications. ON Semiconductor aims to support innovation and sustainability in technology through its diverse portfolio of semiconductor products.

Application

The NTMFS6H818NT1G is a N-channel MOSFET primarily used in power management applications. Its main applications include DC-DC converters, power supply units, motor control, and LED drivers. It is suitable for high-efficiency switching applications due to its low ON resistance and fast switching capabilities, making it ideal for consumer electronics, automotive systems, and industrial equipment.

Equivalent

Equivalent products to the NTMFS6H818NT1G MOSFET include the BSS138, SI2302, and IRLZ44N. When selecting an equivalent, ensure the voltage, current ratings, and package types match your application's requirements. Always refer to the manufacturer's datasheet for detailed specifications.

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