NTMFS5H600NLT1G

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NTMFS5H600NLT1G

MOSFET N-CH 60V 35A/250A 5DFN

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  • Mfr. Partie #NTMFS5H600NLT1G
  • Paquet PowerTDFN-8
  • Fiche de données
  • En stock6777

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 35A (Ta), 250A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 1.3mOhm @ 50A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 89 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 6680 pF @ 30 V
PowerDissipation(Max) 3.3W (Ta), 160W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Vue d'ensemble

Description

The NTMFS5H600NLT1G is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power applications. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of 55A at a temperature of 25°C, which allows it to handle significant loads in various electronic circuits.
This MOSFET is characterized by low on-resistance (R_DS(on)), typically around 8.5 mΩ, enabling minimal power loss and heat generation during operation. Its fast switching capabilities make it suitable for applications such as DC-DC converters, power management systems, and motor drivers.
The device is housed in a TO-220 package, which facilitates efficient heat dissipation, essential for maintaining performance and reliability. The NTMFS5H600NLT1G is ideal for designers seeking a robust component for power conversion and control in consumer electronics, automotive, and industrial applications.

Features

The NTMFS5H600NLT1G is an N-channel MOSFET designed for high-performance applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power management tasks.
2. Current Rating: The continuous drain current (I_D) is up to 60A, enabling it to handle significant loads.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 0.0023 Ohms at V_GS = 10V, which reduces power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, allowing for easy interfacing with low-voltage control signals.
5. Package Type: It comes in a TO-220 package, facilitating effective heat dissipation.
6. Fast Switching: The device supports fast switching speeds, making it ideal for applications such as DC-DC converters and motor control.
These characteristics make the NTMFS5H600NLT1G suitable for automotive, consumer electronics, and industrial applications.

Package

The NTMFS5H600NLT1G is packaged in a DPAK (also known as TO-252) package type. This package is designed for surface-mount applications, providing efficient thermal performance and compact size suitable for power management in various electronic circuits.

Pinout

The NTMFS5H600NLT1G is a N-channel MOSFET with a pin count of 5. Its primary function is to act as a switch or amplifier in electronic circuits, particularly in power applications.
The pin configuration is as follows:
1. Gate (G) – Controls the MOSFET; applies voltage to turn it on/off.
2. Drain (D) – The terminal through which the current flows out when the device is on.
3. Source (S) – The terminal through which the current flows into the device.
This MOSFET is designed for high-efficiency power management and can handle a high voltage rating of 60V with a continuous drain current capability of up to 60A (depending on thermal conditions). It's suitable for applications like DC-DC converters, motor drivers, and load switches.
For specific applications, always refer to the datasheet for detailed electrical characteristics and operational limits.

Manufacturer

The NTMFS5H600NLT1G is manufactured by ON Semiconductor. ON Semiconductor is a prominent semiconductor company that specializes in designing and producing a wide range of semiconductor components, including power management, analog, and mixed-signal devices. The company serves various markets such as automotive, industrial, communications, consumer electronics, and computing. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor focuses on providing high-performance solutions and is known for its commitment to innovation and sustainability in the semiconductor industry.

Application

The NTMFS5H600NLT1G is an N-channel MOSFET designed for power management applications. Its high efficiency and low on-resistance make it suitable for use in power supplies, DC-DC converters, motor drives, and battery management systems. It is commonly used in consumer electronics, automotive applications, and renewable energy systems, providing improved performance in switching and amplification tasks.

Equivalent

The NTMFS5H600NLT1G is an N-channel MOSFET. Equivalent products include the BSS138, BS170, and IRF540, though specifications may vary. For close matches in voltage and current ratings, consider the AO3401, FDS6910, or the IRLZ44N. Always verify the specific parameters like VDS, IDS, and RDS(on) for compatibility in your application.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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