NTMFS5C646NLT1G

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NTMFS5C646NLT1G

MOSFET N-CH 60V 19A 5DFN

  • Fabricant
  • Mfr. Partie #NTMFS5C646NLT1G
  • Paquet SO-8
  • Fiche de données
  • En stock4503

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 19A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 4.7mOhm @ 50A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 33.7 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 2164 pF @ 25 V
PowerDissipation(Max) 3.7W (Ta), 79W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Vue d'ensemble

Description

The NTMFS5C646NLT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) produced by ON Semiconductor. It is designed for high-efficiency power management applications. Key features include a low on-resistance (R_DS(on)), which minimizes conduction losses, making it suitable for applications like DC-DC converters, power management systems, and motor control circuits.
This MOSFET has a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of up to 60A, depending on the thermal conditions. It also boasts fast switching speeds, which enhance performance in high-frequency applications. The device is packaged in a surface-mount format, ideal for compact designs.
Overall, the NTMFS5C646NLT1G is suitable for engineers looking for reliable, efficient solutions in various electronic circuits where space and performance are critical. Always refer to the datasheet for detailed specifications and application guidelines.

Features

The NTMFS5C646NLT1G is a N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, suitable for low-voltage applications.
2. Current Rating: The device supports continuous drain current (I_D) of up to 50A, allowing it to handle substantial loads.
3. On-Resistance: It features a low R_DS(on) of approximately 0.0074Ω at V_GS of 10V, resulting in reduced power losses during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is in the range of 1V to 2.5V, enabling efficient switching at lower gate voltages.
5. Package Type: It comes in a compact SO-8 package, facilitating space-saving designs on PCBs.
6. Fast Switching: The device offers quick turn-on and turn-off times, making it suitable for high-frequency applications.
These attributes make the NTMFS5C646NLT1G ideal for use in power supplies, DC-DC converters, and motor drivers.

Package

The NTMFS5C646NLT1G is packaged in a TO-220 package type, which is designed for high-power applications, providing good thermal performance and ease of mounting to heat sinks.

Pinout

The NTMFS5C646NLT1G is an N-channel MOSFET with a total of 8 pins. It is designed for various power management applications. The pin functions are as follows:
1. Gate (G): Controls the MOSFET's switching.
2. Drain (D): Connects the load to the power source.
3. Source (S): Connects to ground or the lower potential in the circuit.
4. Gate (G): Two gate connections for enhanced performance or redundancy.
5. Drain (D): Two drain connections for better current handling.
6. Source (S): Two source connections for improved thermal performance.
The device is optimized for low on-resistance and fast switching times, making it suitable for high-efficiency applications. It is commonly used in power supplies, motor control, and load switching.

Manufacturer

The manufacturer of the NTMFS5C646NLT1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components, including power management solutions, analog devices, sensors, and logic devices. The company serves various industries such as automotive, industrial, communication, computing, and consumer electronics. Founded in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has positioned itself as a leader in energy-efficient innovations and sustainable technologies. It focuses on providing high-performance products and solutions that meet the needs of its diverse customer base.

Application

The NTMFS5C646NLT1G is an N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, load switches, synchronous rectification, and battery management systems. It is suitable for high-efficiency power supplies in consumer electronics, automotive, and industrial applications due to its low RDS(on) and fast switching capabilities.

Equivalent

The NTMFS5C646NLT1G is a MOSFET transistor. Equivalent products typically include other MOSFETs with similar specifications, such as the BSS138, SI2301, or IRF540. However, ensure to check specific parameters like voltage rating, current rating, and package type to confirm suitability for your application. Always consult the datasheets for exact specifications.

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