NTMFS5C612NT1G

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NTMFS5C612NT1G

NFET SO8FL 60V 235A 1.5MO

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Spécifications

Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta), 230A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 60.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4830 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta), 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package / Case 8-PowerTDFN, 5 Leads

Vue d'ensemble

Description

The NTMFS5C612NT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. It features a low on-resistance (R_DS(on)), which minimizes power loss and enhances thermal performance. This MOSFET is capable of handling high voltages, typically up to 60V, and supports high current levels, making it suitable for a variety of applications such as DC-DC converters, power supplies, and motor drivers.
Key specifications include a maximum continuous drain current (I_D) rating, a gate threshold voltage (V_GS(th)), and a fast switching speed, allowing it to operate effectively in high-frequency environments. The NTMFS5C612NT1G is packaged in a compact surface-mount technology (SMT) format, facilitating easy integration into modern electronic designs.
Overall, this MOSFET is valued for its reliability, efficiency, and versatility in powering various electronic circuits, particularly in consumer electronics, automotive systems, and industrial applications.

Features

The NTMFS5C612NT1G is an N-channel MOSFET optimized for low voltage and high efficiency applications. Key features include:
1. Voltage Rating: 60V, suitable for a variety of power management applications.
2. Current Rating: Maximum continuous drain current of 62A, allowing for handling substantial loads.
3. RDS(on): Very low on-state resistance (approximately 5.5 mΩ at VGS = 10V), which enhances efficiency by reducing conduction losses.
4. Package Type: Available in a TO-220 package, facilitating effective heat dissipation.
5. Fast Switching: Designed for high-speed switching applications, making it ideal for use in power supplies and DC-DC converters.
6. Gate Threshold Voltage (VGS(th)): Typically ranges from 1V to 2.5V, enabling it to efficiently drive with lower gate voltages.
7. Thermal Performance: High power dissipation capability due to its robust construction.
These features make the NTMFS5C612NT1G suitable for automotive, industrial, and consumer electronics applications where efficiency and reliability are crucial.

Package

The NTMFS5C612NT1G is packaged in a PowerPAK SO-8 package. This surface-mount package design is suitable for high-performance applications, offering efficient thermal management and compact size.

Pinout

The NTMFS5C612NT1G is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) with a pin count of 5. Its primary functions include switching and amplification in electronic circuits, making it suitable for various applications such as power management, motor control, and DC-DC converters.
The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's conduction state.
2. Drain (D) - The output terminal where the current flows out.
3. Source (S) - The input terminal where the current flows in.
4. Body (B) - Internally connected to the source; often not labeled in the package.
Key specifications include a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 60A, making it a robust component for high-efficiency applications. Ensure to reference the datasheet for detailed electrical characteristics and thermal performance.

Manufacturer

The manufacturer of the NTMFS5C612NT1G is ON Semiconductor. ON Semiconductor is a global provider of semiconductor solutions that support various applications in automotive, industrial, telecommunications, consumer electronics, and computing. The company focuses on energy-efficient technologies and offers a wide range of products, including power management, analog, sensors, logic, and connectivity devices. Established in 1999, ON Semiconductor is known for its commitment to innovation and sustainability in the semiconductor industry.

Application

The NTMFS5C612NT1G is an N-channel MOSFET commonly used in various applications, including power management, DC-DC converters, motor control, and load switching. Its low on-resistance and high-speed switching capabilities make it suitable for consumer electronics, automotive systems, and industrial applications, where efficient power handling is essential.

Equivalent

The NTMFS5C612NT1G is an N-channel MOSFET. Equivalent products include the BSS138, IRF3708, and 2N7000, depending on the specific application and current-voltage requirements. Always check specifications such as V_DS, I_D, and R_DS(on) to confirm compatibility before substitution.

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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