NTMFS5C612NLT1G

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NTMFS5C612NLT1G

MOSFET N-CH 60V 36A/235A 5DFN

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  • Mfr. Partie #NTMFS5C612NLT1G
  • Paquet QFN-8
  • Fiche de données
  • En stock2368

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 36A (Ta), 235A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 1.5mOhm @ 50A, 10V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 91 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 6660 pF @ 25 V
PowerDissipation(Max) 3.8W (Ta), 167W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Vue d'ensemble

Description

The NTMFS5C612NLT1G is a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for high-efficiency power management applications. With a maximum drain-source voltage (VDS) of 60V and a continuous drain current (ID) of up to 80A, it is well-suited for use in power supplies, motor control, and DC-DC converter circuits.
This MOSFET features a low on-resistance (RDS(on)) value, which minimizes power losses during operation, thereby enhancing overall efficiency. It typically offers fast switching speeds, which are advantageous in applications requiring quick response times.
The device comes in a TO-220 package, allowing for effective heat dissipation and easy mounting on PCBs. Its built-in body diode ensures protection against reverse polarity.
Overall, the NTMFS5C612NLT1G is a versatile component ideal for engineers looking to improve the performance of their electronic designs in various power applications.

Features

The NTMFS5C612NLT1G is a N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It can handle a maximum drain-source voltage (V_DS) of 60V.
2. Current Rating: The continuous drain current (I_D) is rated at 30A at room temperature.
3. On-Resistance: It has a low on-resistance (R_DS(on)) of approximately 6.0 mΩ at V_GS = 10V, which enhances efficiency and reduces heat generation.
4. Switching Speed: The device offers fast switching capabilities, making it suitable for high-frequency applications.
5. Package: Available in a compact SO-8 package, facilitating space-saving designs.
6. Thermal Performance: It features good thermal characteristics, which support higher power applications.
7. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for compatibility with various gate drive levels.
This combination of features makes the NTMFS5C612NLT1G suitable for DC-DC converters, motor drives, and other power management systems.

Package

The NTMFS5C612NLT1G is packaged in a SO-8 (Small Outline 8) package type, which is a surface-mount format commonly used for integrated circuits and power MOSFETs.

Pinout

The NTMFS5C612NLT1G is a N-channel MOSFET with a pin count of 8. It features low on-resistance and fast switching capabilities, making it suitable for various applications, including power management and switching circuits.
### Pin Functions:
1. Gate (G): Controls the MOSFET operation; applies voltage to turn the device on/off.
2. Drain (D): The output terminal where current flows out.
3. Source (S): The input terminal where current enters; usually connected to ground in low-side switching.
4. Drain (D): There are two drain pins for improved thermal performance and current handling.
### Additional Pins:
- Body Diode: Integrated for reverse current conduction.

This device is commonly used in load switching, power supplies, and DC-DC converters, thanks to its high efficiency and robust performance characteristics.

Manufacturer

The NTMFS5C612NLT1G is manufactured by ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including power management, analog, and digital solutions for various applications. The company serves multiple industries, such as automotive, industrial, communications, and consumer electronics. It focuses on energy efficiency and sustainability in its products, contributing to the growing demand for innovative technologies in a variety of electronic applications.

Application

The NTMFS5C612NLT1G is a N-channel MOSFET used in various applications, including power management systems, DC-DC converters, motor drives, and battery management systems. Its features make it suitable for high-efficiency switching and amplification in consumer electronics, automotive applications, and renewable energy systems, particularly in low-voltage applications.

Equivalent

The NTMFS5C612NLT1G is a N-channel MOSFET. Equivalent products include the IRLZ44N, BSS138, and STP16NF06. Always check specifications like voltage, current ratings, and Rds(on) to ensure compatibility with your application.

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