NTMFS5C430NT1G

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NTMFS5C430NT1G

MOSFET N-CH 40V 35A/185A 5DFN

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  • Mfr. Partie #NTMFS5C430NT1G
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Spécifications

Part Status Active
Base Product Number NTMFS5
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V
Current - Continuous Drain (Id) @ 25°C 35A (Ta), 185A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 47 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3300 pF @ 25 V
Power Dissipation (Max) 3.8W (Ta), 106W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 5-DFN (5x6) (8-SOFL)
Package 8-PowerTDFN, 5 Leads
Packaging Cut Tape (CT), Tape & Reel (TR)

Vue d'ensemble

Description

The NTMFS5C430NT1G is a N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) designed for power switching applications. It features low on-resistance and high-speed switching capabilities, making it suitable for use in various applications such as power management, DC-DC converters, and motor control.
Key specifications include a maximum drain-source voltage (V_DS) of 30V, a maximum continuous drain current (I_D) of 50A, and an R_DS(on) (on-resistance) of around 5.5 mΩ at V_GS (gate-source voltage) of 10V.
The MOSFET is housed in a TO-220 package, allowing for efficient heat dissipation. Its robust design makes it ideal for high-efficiency applications. The NTMFS5C430NT1G is appreciated for its reliability and effectiveness in improving overall system performance.
For detailed characteristics and applications, refer to the manufacturer's datasheet.

Features

The NTMFS5C430NT1G is a N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for various low-voltage applications.
2. Current Handling: This MOSFET can handle continuous drain current (I_D) up to 55A under specific conditions, ideal for high-current applications.
3. Low On-resistance: The on-resistance (R_DS(on)) is typically around 9.5 mΩ at V_GS = 10V, which minimizes power loss and enhances efficiency.
4. Fast Switching: It offers quick switching times, making it suitable for high-frequency applications.
5. Thermal Performance: Designed with a low thermal resistance, allowing effective heat dissipation.
6. Package: Available in a TO-220 package, which facilitates good thermal management and easy mounting.
Overall, the NTMFS5C430NT1G is an efficient, robust choice for various power applications, including DC-DC converters, motor control, and power switching circuits.

Package

The NTMFS5C430NT1G is packaged in a TO-220 form factor. This package type is suitable for applications requiring robust thermal performance and power handling capabilities.

Pinout

The NTMFS5C430NT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features a total of 3 pins.
1. Gate (G): This pin controls the MOSFET’s on/off state. Applying a voltage to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is where the load is connected. Current flows from the drain to the source when the device is turned on.
3. Source (S): This pin is connected to the ground or the lower voltage side of the circuit. It serves as the reference point for the drain current.
The NTMFS5C430NT1G is optimized for low on-resistance and high-speed switching, making it suitable for applications such as power management, DC-DC converters, and motor drivers.

Manufacturer

The NTMFS5C430NT1G is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions. ON Semiconductor specializes in various sectors, including automotive, industrial, communications, and consumer electronics. The company provides a wide range of products, including power management, analog, logic, timing, and custom devices. Established in 1999, ON Semiconductor has grown through acquisitions and innovation, focusing on energy-efficient technologies and sustainable practices. Their products are widely used in applications that require efficient power management and high performance, making them a key player in the semiconductor industry.

Application

The NTMFS5C430NT1G is a N-channel MOSFET used primarily in power management applications. Its key application areas include DC-DC converters, power supplies, motor control, and battery management systems. It is suitable for high-efficiency switching applications due to its low on-resistance and high-speed switching capabilities, making it ideal for consumer electronics, renewable energy systems, and electric vehicles.

Equivalent

The NTMFS5C430NT1G is an N-channel MOSFET. Equivalent products include the IRF3205, FDS6680, and BSS138. When looking for alternatives, consider specifications such as voltage rating, current rating, RDS(on), and package type to ensure compatibility in your application. Always verify the datasheet for exact parameters.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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