NTMFS5C426NT1G

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NTMFS5C426NT1G

MOSFET N-CH 40V 41A/235A 5DFN

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Spécifications

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 40 V
Current-ContinuousDrain(Id)@25°C 41A (Ta), 235A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 1.3mOhm @ 50A, 10V
Vgs(th)(Max)@Id 3.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 65 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 4300 pF @ 25 V
PowerDissipation(Max) 3.8W (Ta), 128W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Vue d'ensemble

Description

The NTMFS5C426NT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient power management applications. It features a low on-resistance, typically around 5.5 mΩ at Vgs = 10V, which helps reduce power losses during operation. This MOSFET can handle a maximum drain-source voltage (Vds) of 40V and a continuous drain current (Id) of up to 50A, making it suitable for applications such as power supply circuits, DC-DC converters, and motor drivers.
The device is housed in a compact SO-8 package, allowing for efficient thermal management and PCB space savings. With its fast switching capabilities and low gate charge, the NTMFS5C426NT1G is ideal for high-frequency applications. It also features a built-in body diode, which provides additional protection and improves efficiency in half-bridge configurations. Overall, this MOSFET is a reliable choice for engineers looking to enhance the performance and efficiency of their electronic designs.

Features

The NTMFS5C426NT1G is an N-channel MOSFET designed for various power applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 25V, making it suitable for low-voltage applications.
2. Current Rating: It can handle a continuous drain current (I_D) of up to 5.6A, providing robust performance in switching applications.
3. R_DS(on): The on-resistance is low (approximately 4.5 mΩ at V_GS = 10V), which helps reduce power loss and improve efficiency.
4. Gate Threshold Voltage (V_GS(th)): The threshold voltage is between 1V and 2.5V, suitable for logic-level driving.
5. Package Type: It comes in a compact DPAK (TO-252) package, facilitating easy integration into electronic designs.
6. Applications: Ideal for use in DC-DC converters, motor drivers, and other power management applications.
Overall, the NTMFS5C426NT1G is engineered for efficient switching with minimal energy loss, making it a versatile choice for modern electronic systems.

Package

The NTMFS5C426NT1G is packaged in a SOT-23 (Small Outline Transistor) form factor. This surface mount package is commonly used for its compact size and efficiency in various electronic applications.

Pinout

The NTMFS5C426NT1G is a N-channel MOSFET transistor with a total of 5 pins. The pin configuration is as follows:
1. Gate (G) - Controls the MOSFET's switching.
2. Drain (D) - The terminal through which the current exits the MOSFET.
3. Source (S) - The terminal through which the current enters the MOSFET.
The functionality of this MOSFET includes low on-resistance and fast switching, making it suitable for applications in power management, DC-DC converters, and load switching. It's designed for efficient operation in various electronic circuits.

Manufacturer

The manufacturer of the NTMFS5C426NT1G is ON Semiconductor. ON Semiconductor is a multinational company that specializes in designing and manufacturing a wide range of semiconductor components, including power management, analog, and digital devices. The company serves various industries such as automotive, industrial, communications, and consumer electronics. ON Semiconductor is known for its focus on energy-efficient solutions and innovative technologies, contributing to advancements in electronics and sustainable energy.

Application

The NTMFS5C426NT1G is an N-channel MOSFET primarily used in power management applications, including DC-DC converters, load switch applications, and battery management systems. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power supplies, motor control systems, and automotive applications. Additionally, it is utilized in consumer electronics for efficient power delivery and thermal management solutions.

Equivalent

The NTMFS5C426NT1G is a N-channel MOSFET. Equivalent products include the BSS138, AO3400, and IRF540, among others. When selecting an equivalent, ensure compatibility in key parameters such as voltage, current ratings, and package type. Always consult the datasheet for specific applications to ensure optimal performance.

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UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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