NTMFS4C302NT1G

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NTMFS4C302NT1G

MOSFET N-CH 30V 41A/230A 5DFN

  • Fabricant
  • Mfr. Partie #NTMFS4C302NT1G
  • Paquet SO-8
  • Fiche de données
  • En stock2536

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V
Current-ContinuousDrain(Id)@25°C 41A (Ta), 230A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V
RdsOn(Max)@IdVgs 1.15mOhm @ 30A, 10V
Vgs(th)(Max)@Id 2.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 82 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 5780 pF @ 15 V
PowerDissipation(Max) 3.13W (Ta), 96W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Vue d'ensemble

Description

The NTMFS4C302NT1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features a low on-resistance (RDS(on)), which enhances efficiency in switching applications by minimizing power loss. With a maximum drain-source voltage (VDS) of 40V and a continuous drain current (ID) of 30A, it is suitable for a variety of applications, including power supplies, motor drives, and automotive systems.
The device is packaged in a compact SO-8 surface-mount package, making it suitable for space-constrained designs. Key attributes include fast switching speeds, thermal stability, and high reliability, which contribute to its performance in demanding environments. The NTMFS4C302NT1G is ideal for engineers seeking efficient, reliable, and compact solutions in their electronic designs.

Features

The NTMFS4C302NT1G is an N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle a continuous drain current (ID) of up to 75A, enabling it to manage high power loads effectively.
3. Low RDS(on): It features a low on-resistance (RDS(on)) of around 4.5 mΩ at VGS of 10V, which minimizes power losses during operation.
4. Fast Switching: The MOSFET supports high-speed switching, which is ideal for applications like DC-DC converters, motor drivers, and power management circuits.
5. Thermal Performance: It has a robust thermal resistance, allowing for efficient heat dissipation.
6. Package Type: Available in a TO-220 package, facilitating heat sinking for improved thermal management.
These characteristics make the NTMFS4C302NT1G suitable for a variety of power electronics applications.

Package

The NTMFS4C302NT1G is packaged in a DPAK (TO-252) form factor. This type of package allows for efficient thermal management and is commonly used in power applications.

Pinout

The NTMFS4C302NT1G is an N-channel MOSFET with a pin count of 4. It features a TO-220 package. The primary functions of its pins are as follows:
1. Gate (G): This pin controls the MOSFET's operation; applying a voltage here turns the device on.
2. Drain (D): This is the pin through which the current flows out when the MOSFET is in the on state.
3. Source (S): This pin is connected to the lower potential in the circuit; current enters this pin when the MOSFET is on.
4. Tab (also connected to the Source): This is for heat dissipation and is usually connected to the Source terminal in circuits for better thermal management.
The NTMFS4C302NT1G is designed for applications requiring efficient switching and power management, making it suitable for various electronic devices.

Manufacturer

The NTMFS4C302NT1G is manufactured by ON Semiconductor, a global supplier of semiconductor components. ON Semiconductor specializes in designing and manufacturing a wide range of electronic components, including power management, analog, logic, timing, interface, and discrete devices. The company serves various industries such as automotive, industrial, telecommunications, and consumer electronics, providing innovative solutions that enhance energy efficiency and performance in electronic systems. Established in 1999, ON Semiconductor has grown through acquisitions and organic development, positioning itself as a key player in the semiconductor market.

Application

The NTMFS4C302NT1G is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor control, and general-purpose switching. Its low on-resistance and high-speed switching capabilities make it suitable for power supplies, battery management systems, and electric vehicle applications. Additionally, it's utilized in renewable energy systems, such as solar inverters, for efficient energy conversion and management.

Equivalent

The NTMFS4C302NT1G is a N-channel MOSFET. Equivalent products include the BSS139, IRLZ44N, and FQP30N06L. However, always verify specifications such as V_DS, I_D, and R_DS(on) to ensure compatibility for your specific application.

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TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

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