NTJD5121NT1G

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NTJD5121NT1G

MOSFET 2N-CH 60V 295MA SOT363

  • Fabricant
  • Mfr. Partie #NTJD5121NT1G
  • Paquet SC-88-6
  • Fiche de données
  • En stock6623

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType 2 N-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 60V
Current-ContinuousDrain(Id)@25°C 295mA
RdsOn(Max)@IdVgs 1.6Ohm @ 500mA, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 0.9nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 26pF @ 20V
Power-Max 250mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

Vue d'ensemble

Description

The NTJD5121NT1G is a high-performance, low-dropout (LDO) voltage regulator designed for various electronic applications. It typically features a 5V output, ideal for powering low-voltage components in portable devices, consumer electronics, and embedded systems. With a compact SOT-23 package, it offers space-saving advantages suitable for compact circuit designs.
This LDO regulator primarily provides stable output voltage with low ripple and noise, ensuring reliable performance in sensitive applications. Key specifications often include a maximum output current of around 500 mA, a low dropout voltage (typically less than 1V), and a wide input voltage range.
The device usually includes protection features such as thermal shutdown and short-circuit protection, enhancing reliability and safety in various operational conditions. Overall, the NTJD5121NT1G is a versatile choice for engineers looking for efficient, reliable voltage regulation in their designs.

Features

The NTJD5121NT1G is a dual N-channel MOSFET designed for various power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: It can handle continuous drain currents of up to 56A, which allows it to manage significant load requirements.
3. Low On-Resistance: With a maximum RDS(on) of approximately 10 mΩ at a 10V gate voltage, it provides efficient conductivity and minimizes power loss.
4. Fast Switching Speed: The device offers high-speed switching capabilities, making it ideal for applications like DC-DC converters and motor control.
5. Package: It typically comes in a TO-220 or similar package, ensuring good thermal dissipation.
6. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges from 2V to 4V, allowing for compatibility with low voltage logic levels.
These features make the NTJD5121NT1G a versatile choice for numerous electronic designs requiring efficient power management.

Package

The NTJD5121NT1G is packaged in a 6-lead TSOT-23 format. This surface-mount package is compact and designed for applications with space constraints, providing ease of integration into various electronic circuits.

Pinout

The NTJD5121NT1G is a dual N-channel MOSFET housed in an SOT-23 package. It has a pin count of 6. The primary functions of the pins are:
1. Gate 1 (G1): Controls the first N-channel MOSFET.
2. Drain 1 (D1): Connects to the load for the first MOSFET.
3. Source 1 (S1): Connects to ground or the negative side of the load for the first MOSFET.
4. Gate 2 (G2): Controls the second N-channel MOSFET.
5. Drain 2 (D2): Connects to the load for the second MOSFET.
6. Source 2 (S2): Connects to ground or the negative side of the load for the second MOSFET.
This component is commonly used in switching applications and power management due to its efficiency and compact size.

Manufacturer

The NTJD5121NT1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, sensor, logic, timing, discrete, and custom devices. The company serves various markets, including automotive, industrial, communications, and consumer electronics. Established in 1999, ON Semiconductor has grown through acquisitions and innovation, positioning itself as a key player in the semiconductor industry, focusing on energy-efficient solutions and advanced technologies.

Application

The NTJD5121NT1G is a high-performance N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, power supply systems, battery management, motor control, and load switching in consumer electronics. Its low on-resistance and fast switching capabilities make it suitable for efficient energy conversion and thermal management in various electronic devices.

Equivalent

The NTJD5121NT1G is a part of the N-channel MOSFET family. Equivalent products include the BSS138, 2N7000, and BS170, among others. When selecting a replacement, ensure that the voltage, current ratings, and package type match your specific application requirements. Always consult the datasheets for detailed specifications.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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