NTJD4105CT2G

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NTJD4105CT2G

MOSFET N/P-CH 20V/8V 0.63A SC88

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Spécifications

Part Status Active
Technology MOSFET (Metal Oxide)
Configuration N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 20V, 8V
Current - Continuous Drain (Id) @ 25°C 630mA, 775mA
Rds On (Max) @ Id, Vgs 375mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 46pF @ 20V
Power - Max 270mW
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Base Product Number NTJD4105

Vue d'ensemble

Description

NTJD4105CT2G is a surface-mount Schottky diode, commonly used in power management applications due to its low forward voltage drop and fast switching capabilities. It is designed for high-efficiency rectification in various electronic circuits, making it suitable for power supplies, battery charging, and protection circuits.
The diode features a maximum reverse voltage rating, allowing it to handle significant voltage without breakdown, while its low forward current rating supports high-speed signal processing. Its compact size enables integration into space-constrained designs, making it ideal for consumer electronics, automotive applications, and industrial equipment.
Key specifications typically include forward current ratings (often in the range of a few amperes), reverse voltage ratings, and package dimensions. The NTJD4105CT2G is a preferred choice for engineers looking to enhance the efficiency and reliability of their electronic designs.

Features

The NTJD4105CT2G is a N-channel MOSFET designed for low-voltage, high-speed switching applications. Its key features include:
1. Voltage Rating: Maximum drain-source voltage (Vds) of 30V.
2. Current Rating: Continuous drain current (Id) of 30A at a maximum junction temperature.
3. On-Resistance: Low Rds(on) typically around 10 mΩ, ensuring efficient performance and reduced power loss.
4. Gate Threshold Voltage: Vgs(th) between 1V to 3V, facilitating low-voltage operation.
5. Package Type: Available in a TO-220 package, which provides good thermal performance.
6. Fast Switching Speed: Suitable for high-frequency applications.
7. Applications: Commonly used in power management, motor control, and DC-DC converters.
This combination of features makes the NTJD4105CT2G ideal for various electronic applications requiring efficient power management and control.

Package

The NTJD4105CT2G is packaged in a surface-mount SO-8 (Small Outline 8) package type. This compact design is suitable for various applications in electronic circuits, providing efficient thermal performance and space-saving benefits.

Pinout

The NTJD4105CT2G is a dual N-channel MOSFET with a total of 8 pins. Its primary functions include acting as a switch or amplifier in electronic circuits. The device is optimized for low on-resistance and high-speed switching applications, making it suitable for power management and battery-operated devices.
The pin configuration is as follows:
1. Gate 1 - Controls the first N-channel MOSFET.
2. Drain 1 - Connected to the load for the first MOSFET.
3. Source 1 - Common connection for the first MOSFET.
4. Gate 2 - Controls the second N-channel MOSFET.
5. Drain 2 - Connected to the load for the second MOSFET.
6. Source 2 - Common connection for the second MOSFET.
7. Drain 1 (shared) - Can be used for connecting both MOSFETs to a common load.
8. Source 1 (shared) - Common ground for both MOSFETs.
This configuration allows for efficient control of power in various applications.

Manufacturer

The NTJD4105CT2G is a product manufactured by ON Semiconductor. ON Semiconductor is a global supplier of semiconductor-based solutions, specializing in a wide range of applications, including power management, analog, sensors, logic, and connectivity. The company focuses on energy-efficient technologies and provides products that support various markets, including automotive, industrial, and consumer electronics. Their extensive portfolio includes a variety of integrated circuits, discrete devices, and modules designed to meet the needs of diverse electronic applications.

Application

The NTJD4105CT2G is a N-channel MOSFET primarily used in power management applications, including DC-DC converters, motor drivers, and power amplifiers. It is suitable for applications in consumer electronics, automotive systems, and industrial automation where efficient switching and low on-resistance are essential for performance and energy efficiency.

Equivalent

The NTJD4105CT2G is a dual N-channel MOSFET. Equivalent products include the AO3400, BSS138, and SI2302. Be sure to check specifications like voltage, current ratings, and package type to ensure compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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