NTJD4105CT1G

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NTJD4105CT1G

MOSFET N/P-CH 20V/8V SOT-363

  • Fabricant
  • Mfr. Partie #NTJD4105CT1G
  • Paquet SOT363
  • Fiche de données
  • En stock7526

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 20V, 8V
Current-ContinuousDrain(Id)@25°C 630mA, 775mA
RdsOn(Max)@IdVgs 375mOhm @ 630mA, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 3nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 46pF @ 20V
Power-Max 270mW
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 6-TSSOP, SC-88, SOT-363

Vue d'ensemble

Description

The NTJD4105CT1G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for efficient switching applications. It features a low on-resistance, allowing for reduced power loss and improved thermal performance in various electronic devices. The device is commonly used in power management, motor control, and other applications where efficient voltage regulation and switching are critical.
Key specifications of the NTJD4105CT1G include a maximum drain-source voltage (Vds) of 30V, a continuous drain current (Id) rating of up to 30A, and a low gate threshold voltage, making it suitable for low-voltage applications. Its compact package size enables integration into space-constrained designs.
This MOSFET is popular among engineers for its reliability and performance in both consumer electronics and industrial applications. Proper thermal management and adherence to the electrical specifications are essential for optimal performance in circuit designs.

Features

The NTJD4105CT1G is a dual N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for a variety of low-voltage applications.
2. Current Rating: It can handle continuous drain currents (I_D) up to 40A with appropriate thermal management.
3. Low R_DS(on): It features a low on-resistance (R_DS(on)) of around 8 mΩ, which helps reduce power losses during operation.
4. Fast Switching Speed: The device is optimized for fast switching applications, enhancing efficiency in power converters and inverters.
5. Surface Mount Package: Housed in a DPAK package, it facilitates easy mounting on printed circuit boards (PCBs).
6. Temperature Range: It operates effectively across a wide temperature range, ensuring reliability in varied environments.
These features make the NTJD4105CT1G suitable for applications in power supplies, motor drivers, and audio amplifiers.

Package

The NTJD4105CT1G is packaged in a SOT-23 (Small Outline Transistor) surface mount package. This compact package design is commonly used for low-power applications in electronics.

Pinout

The NTJD4105CT1G is a dual N-channel MOSFET with a pin count of 8. It is commonly used in applications requiring high-speed switching and low on-resistance.
The function of each pin is as follows:
1. Gate 1 (G1) - Controls the first N-channel MOSFET.
2. Drain 1 (D1) - Output for the first N-channel MOSFET.
3. Source 1 (S1) - Source terminal for the first N-channel MOSFET.
4. Gate 2 (G2) - Controls the second N-channel MOSFET.
5. Drain 2 (D2) - Output for the second N-channel MOSFET.
6. Source 2 (S2) - Source terminal for the second N-channel MOSFET.
7. Drain 1 (D1) - Common drain for the first MOSFET.
8. Source 2 (S2) - Common source for the second MOSFET.
The device is designed for applications in power management, motor control, and other switching applications.

Manufacturer

The NTJD4105CT1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including discrete components, logic devices, and integrated circuits. The company focuses on providing energy-efficient technologies and is involved in various markets such as automotive, industrial, communications, and consumer electronics. They are known for their commitment to innovation and sustainability in the semiconductor industry.

Application

The NTJD4105CT1G is a N-channel MOSFET primarily used in applications such as power management, switching regulators, motor drivers, and LED lighting. Its features make it suitable for automotive, consumer electronics, and industrial applications where efficient power conversion and switching are essential.

Equivalent

The NTJD4105CT1G is a dual N-channel MOSFET. Equivalent products include the BSS138, SI2302, and AO3400. Always check specific characteristics such as voltage, current ratings, and R_DS(on) to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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