NTHD4102PT1G

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NTHD4102PT1G

MOSFET 2P-CH 20V 2.9A CHIPFET

  • Fabricant
  • Mfr. Partie #NTHD4102PT1G
  • Paquet 8-SMD, Flat Lead
  • Fiche de données
  • En stock2438

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType 2 P-Channel (Dual)
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 20V
Current-ContinuousDrain(Id)@25°C 2.9A
RdsOn(Max)@IdVgs 80mOhm @ 2.9A, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 8.6nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 750pF @ 16V
Power-Max 1.1W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SMD, Flat Lead

Vue d'ensemble

Description

NTHD4102PT1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for power management applications. It features low on-resistance and fast switching speeds, which make it suitable for use in various electronic circuits, including switching power supplies, motor drivers, and DC-DC converters. The device typically supports high current capacity and can handle a wide range of voltages, ensuring efficient power conversion and thermal management.
NTHD4102PT1G comes in a compact package, allowing for space-saving designs in modern electronics. Its characteristics, such as low gate threshold voltage and high input impedance, contribute to enhanced efficiency and performance in applications ranging from consumer electronics to industrial systems.
When integrating NTHD4102PT1G into designs, considerations include thermal management, gate drive requirements, and the load conditions to optimize performance and reliability.

Features

The NTHD4102PT1G is a high-performance, low on-resistance N-channel MOSFET designed for a variety of applications, including power management and switching. Key features include:
1. Low R_DS(on): Provides efficient performance with minimal power loss, enhancing the overall efficiency of the circuit.
2. High Speed: Fast switching capabilities make it suitable for high-frequency applications.
3. Low Gate Charge (Q_g): Reduces driving power requirements, allowing for lower energy consumption in control circuits.
4. High Voltage Rating: Capable of handling high voltages, making it versatile for different applications.
5. Robust Package: Available in a surface-mount package, optimized for space-saving designs.
These features make the NTHD4102PT1G ideal for use in DC-DC converters, load switching, and other power management applications.

Package

The NTHD4102PT1G is packaged in a SOT-23-5 (Small Outline Transistor) format. This surface-mount package is designed for compact applications, providing efficient thermal performance and space-saving benefits.

Pinout

The NTHD4102PT1G is a dual N-channel MOSFET housed in a 6-pin SC-70 package. It features a total of 6 pins, which are used for the following functions:
1. Gate 1 (G1) - Controls the operation of the first N-channel MOSFET.
2. Drain 1 (D1) - The drain terminal for the first MOSFET.
3. Source 1 (S1) - The source terminal for the first MOSFET.
4. Gate 2 (G2) - Controls the operation of the second N-channel MOSFET.
5. Drain 2 (D2) - The drain terminal for the second MOSFET.
6. Source 2 (S2) - The source terminal for the second MOSFET.
This component is typically used in applications requiring low on-resistance and fast switching speeds, such as power management and switching circuits.

Manufacturer

The manufacturer of the NTHD4102PT1G is ON Semiconductor. ON Semiconductor is a global semiconductor supplier that provides a wide range of products, including power management, analog, and digital components. The company serves various industries, including automotive, industrial, communications, and consumer electronics. Established in 1999, ON Semiconductor focuses on energy-efficient solutions and has a strong emphasis on innovation and sustainability in its product offerings.

Application

The NTHD4102PT1G is a high-speed, low-threshold N-channel MOSFET commonly used in applications such as power management, load switching, DC-DC converters, and motor control. Its low on-resistance and fast switching capabilities make it suitable for portable devices, battery-operated systems, and power supplies in consumer electronics. Additionally, it can be utilized in automotive applications for efficient power distribution and control.

Equivalent

The NTHD4102PT1G chip is a dual N-channel MOSFET. Equivalent products include:
1. BSS138
2. 2N7000
3. BS170
4. NTD5865N
Ensure to check the specifications, such as voltage, current ratings, and package type, to confirm compatibility for your specific application.

Expédition

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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