NTHD3101FT1G

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NTHD3101FT1G

MOSFET P-CH 20V 3.2A CHIPFET

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  • Mfr. Partie #NTHD3101FT1G
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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 3.2A (Tj)
DriveVoltage(MaxRdsOnMinRdsOn) 1.8V, 4.5V
RdsOn(Max)@IdVgs 80mOhm @ 3.2A, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 7.4 nC @ 4.5 V
Vgs(Max) ±8V
InputCapacitance(Ciss)(Max)@Vds 680 pF @ 10 V
FETFeature Schottky Diode (Isolated)
PowerDissipation(Max) 1.1W (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage ChipFET™

Vue d'ensemble

Description

The NTHD3101FT1G is a high-performance N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by ON Semiconductor. It is designed for use in various applications including power management, switching, and amplification. This device features a low on-resistance (RDS(on)), which enhances efficiency and reduces heat generation during operation.
The NTHD3101FT1G supports a maximum drain-source voltage (VDS) and can handle significant continuous drain current (ID), making it suitable for demanding environments. Its compact package design allows for easy integration into circuits, and it is widely utilized in consumer electronics, automotive, and industrial applications.
Overall, the NTHD3101FT1G is valued for its reliability, efficiency, and versatility in electronic circuit design.

Features

The NTHD3101FT1G is a high-performance N-channel MOSFET designed for power management applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: It can handle continuous drain currents up to 18A, offering efficient performance.
3. Low R_DS(on): The device boasts a low on-resistance (R_DS(on)), typically around 14 mΩ, which minimizes power loss and improves thermal performance.
4. Fast Switching Speed: Its design allows for fast switching, making it ideal for high-frequency applications.
5. Package: Available in a compact surface-mount SO-8 package, facilitating easy integration into space-constrained designs.
6. Thermal Performance: It supports good thermal management due to its low thermal resistance.
7. Applications: Commonly used in power supplies, motor drives, and DC-DC converters.
Overall, the NTHD3101FT1G is a versatile and reliable component for various power electronics applications.

Package

The NTHD3101FT1G is packaged in a SOT-223 type package. This is a small, surface-mount package designed for enhanced thermal performance and efficient use of board space.

Pinout

The NTHD3101FT1G is a single N-channel MOSFET designed for various switching applications. It has a total of 6 pins. The pin configuration is as follows:
1. Gate (G) - Controls the operation of the MOSFET.
2. Drain (D) - The terminal where the output current flows out.
3. Source (S) - The terminal where the input current enters.
The remaining pins are typically connected to the substrate or for specific packaging configurations, which may include:
4. Substrate/Body (B) - Usually internally connected to the source.
5. Gate (G) - Sometimes additional gates may appear based on the packaging.
6. Drain (D) - Additional points for enhanced routing in multi-channel packages.
The NTHD3101FT1G is characterized by low on-resistance and fast switching capabilities, making it suitable for applications in power management, load switching, and signal switching in various electronic devices.

Manufacturer

The NTHD3101FT1G is a product manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. Founded in 1999, ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor solutions, including analog, power management, logic, and discrete devices. The company serves various industries, such as automotive, industrial, communications, and consumer electronics, focusing on energy-efficient technologies and innovative semiconductor applications. ON Semiconductor is known for its commitment to sustainability and enhancing performance through advanced semiconductor technologies.

Application

NTHD3101FT1G is a dual N-channel MOSFET primarily used in power management applications, including DC-DC converters, power supplies, and load switches. It is suitable for automotive, industrial, and consumer electronics, offering efficient switching and low on-resistance for enhanced thermal performance. Its compact package makes it ideal for space-constrained designs.

Equivalent

The NTHD3101FT1G is a high-speed, low-noise operational amplifier. Equivalent products include the TLV2371, LMV358, and OPA2134. These alternatives share similar specifications in terms of low offset voltage, bandwidth, and low power consumption, making them suitable substitutes in various applications. Always verify specific parameters for compatibility in your design.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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