NTHC5513T1G

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NTHC5513T1G

MOSFET N/P-CH 20V CHIPFET

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Spécifications

Supplier onsemi,Rochester Electronics, LLC
Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N and P-Channel
FETFeature Logic Level Gate
DraintoSourceVoltage(Vdss) 20V
Current-ContinuousDrain(Id)@25°C 2.9A, 2.2A
RdsOn(Max)@IdVgs 80mOhm @ 2.9A, 4.5V
Vgs(th)(Max)@Id 1.2V @ 250µA
GateCharge(Qg)(Max)@Vgs 4nC @ 4.5V
InputCapacitance(Ciss)(Max)@Vds 180pF @ 10V
Power-Max 1.1W
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case 8-SMD, Flat Lead

Vue d'ensemble

Description

NTHC5513T1G is a specific model of a N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) manufactured by ON Semiconductor. It is designed for use in various electronic applications where efficient power management is critical. The device typically features a low on-resistance, which minimizes power loss during operation, making it suitable for high-efficiency switching applications.
Key characteristics of the NTHC5513T1G include its voltage rating, current rating, and thermal performance, which are essential for ensuring reliability in circuits that handle significant power levels. This MOSFET is commonly used in power supply circuits, motor control, and other applications requiring fast switching.
The T1G suffix denotes the packaging type and indicates that it comes in a surface-mount configuration, facilitating easier integration into compact designs. Overall, the NTHC5513T1G is an essential component for engineers looking to optimize performance in their electronic designs.

Features

The NTHC5513T1G is a dual N-channel MOSFET designed for efficient power management applications. Key features include:
1. Voltage Rating: It typically has a maximum drain-source voltage (VDS) of 30V.
2. Current Rating: Continuous drain current can be up to 60A, depending on thermal conditions.
3. RDS(on): Low on-resistance (RDS(on)) which reduces conduction losses, enabling better efficiency.
4. Package Type: Available in a compact SO-8 package, ideal for space-constrained applications.
5. Gate Threshold Voltage: Low gate threshold voltage for easy driving and improved switching performance.
6. High-Speed Switching: Suitable for high-frequency applications due to fast switching capabilities.
7. Thermal Performance: Good thermal management with a low thermal resistance junction-to-ambient (RθJA).
These features make the NTHC5513T1G suitable for various applications, including DC-DC converters, motor drivers, and power supply systems.

Package

The NTHC5513T1G is housed in a SO-8 (Small Outline) package type. This surface-mounted package is commonly used in integrated circuits for its compact size and ease of integration into electronic circuits.

Pinout

The NTHC5513T1G is a dual N-channel MOSFET in a 5x6 mm PowerSO-8 package. It has a total of 8 pins. The primary function of the NTHC5513T1G is to serve as a power switch in various applications, including DC-DC converters, power management, and load switching. Its dual N-channel configuration allows for efficient bidirectional current flow and low on-resistance, making it suitable for high-efficiency designs. The device is designed to handle significant power levels and provides features such as fast switching capabilities and thermal performance.

Manufacturer

The manufacturer of the NTHC5513T1G is ON Semiconductor. ON Semiconductor is a global semiconductor company that designs, manufactures, and markets a wide range of electronic components. Founded in 1999 and headquartered in Phoenix, Arizona, it specializes in providing energy-efficient solutions, including power management, analog, and logic devices, as well as sensors and connectivity products. The company serves various industries, including automotive, industrial, communications, and consumer electronics, focusing on innovation and sustainability in semiconductor technology.

Application

The NTHC5513T1G is a high-voltage, low-on-resistance N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, power supplies, motor control, and battery management systems. It's suitable for use in computing, consumer electronics, and automotive industries where efficient power switching is required.

Equivalent

The NTHC5513T1G is a dual N-channel MOSFET. Equivalent products include the SO-8 packaged parts like the BSS139, BSS138, and the TPS2225. For direct replacements, consider other dual N-channel MOSFETs with similar specifications in terms of voltage rating, current handling, and on-resistance. Always verify the datasheet for specific parameters to ensure compatibility.

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FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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