NTGS3443T1G

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NTGS3443T1G

MOSFET P-CH 20V 2.2A 6TSOP

  • Fabricant
  • Mfr. Partie #NTGS3443T1G
  • Paquet TSOP-6
  • Fiche de données
  • En stock3175

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 20 V
Current-ContinuousDrain(Id)@25°C 2.2A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 2.5V, 4.5V
RdsOn(Max)@IdVgs 65mOhm @ 4.4A, 4.5V
Vgs(th)(Max)@Id 1.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 15 nC @ 4.5 V
Vgs(Max) ±12V
InputCapacitance(Ciss)(Max)@Vds 565 pF @ 5 V
PowerDissipation(Max) 500mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
SupplierDevicePackage 6-TSOP

Vue d'ensemble

Description

NTGS3443T1G is a code that typically refers to a specific product or component in the realm of electronics, particularly a type of transistor. In this case, it likely designates a specific model of a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) used in various electronic applications.
These transistors are essential for switching and amplifying signals in circuits, making them crucial for power management and signal processing. The "T1G" suffix often indicates that the component is available in a specific package or configuration, enhancing its usability in integrated circuits and systems.
For more detailed specifications, such as voltage ratings, current handling, and thermal characteristics, it is best to refer to the manufacturer's datasheet. This document provides in-depth information about performance parameters, applications, and recommended usage scenarios, ensuring optimal implementation in electronic designs.

Features

The NTGS3443T1G is a high-performance, N-channel MOSFET designed for various applications, including power management and switching. Its key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for low-voltage applications.
2. Current Rating: The device can handle continuous drain current (I_D) up to 20A, offering strong performance in power applications.
3. R_DS(on): It features a low on-resistance (R_DS(on)) value of around 12 mΩ at 10V gate voltage, which ensures minimal power loss and heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 3V, allowing for efficient switching with lower drive voltages.
5. Package: It is available in a compact surface-mount SO-8 package, facilitating easy integration into various PCB designs.
Overall, the NTGS3443T1G is ideal for battery management systems, LED drivers, and other applications requiring efficient power control.

Package

The NTGS3443T1G is packaged in a 3x3mm, 8-lead, surface mount DFN (Dual Flat No-lead) package. This package type is designed for space-saving and efficient thermal performance in electronic applications.

Pinout

The NTGS3443T1G is a dual N-channel MOSFET in a 6-lead SOT-23 package. It has a pin count of 6.
Here are the pin functions:
1. G (Gate) - Controls the MOSFET turning on and off.
2. D (Drain) - The terminal for current flow from the MOSFET.
3. S (Source) - The terminal through which current enters the MOSFET.
4. D (Drain) - Another drain pin for the second N-channel MOSFET.
5. S (Source) - Another source pin for the second N-channel MOSFET.
6. G (Gate) - Another gate pin for the second N-channel MOSFET.
This device is commonly used in low-side switching applications, where it efficiently controls power to various loads. The NTGS3443T1G features low RDS(on) for improved efficiency.

Manufacturer

The NTGS3443T1G is manufactured by ON Semiconductor, a leading global supplier of semiconductor-based solutions. ON Semiconductor specializes in designing and manufacturing a wide range of products, including analog, discrete, and power management semiconductors, as well as sensors and other integrated circuits. The company serves various markets, including automotive, industrial, communications, and consumer electronics, focusing on energy efficiency and sustainable technology. Established in 1999, ON Semiconductor has grown through numerous acquisitions and innovations, positioning itself as a key player in the semiconductor industry.

Application

The NTGS3443T1G is a low-threshold N-channel MOSFET primarily used in various applications such as power management, DC-DC converters, load switching, and signal switching. It is suitable for consumer electronics, automotive systems, and industrial equipment, providing efficient performance in compact designs.

Equivalent

The NTGS3443T1G is a low-leakage N-channel MOSFET. Equivalent products include the BSS138, BS170, and 2N7000, depending on specific application requirements like voltage, current ratings, and package type. Always verify datasheets for precise specifications to ensure compatibility.

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