NTF3055L108T1G

Les images sont à titre de référence seulement

NTF3055L108T1G

MOSFET N-CH 60V 3A SOT223

  • Fabricant
  • Mfr. Partie #NTF3055L108T1G
  • Paquet SOT-223-4
  • Fiche de données
  • En stock2907

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 3A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 5V
RdsOn(Max)@IdVgs 120mOhm @ 1.5A, 5V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 15 nC @ 5 V
Vgs(Max) ±15V
InputCapacitance(Ciss)(Max)@Vds 440 pF @ 25 V
PowerDissipation(Max) 1.3W (Ta)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-223 (TO-261)

Vue d'ensemble

Description

The NTF3055L108T1G is an N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a low on-resistance, making it suitable for power management in various electronic devices. With a maximum drain-source voltage (VDS) of 55V and a continuous drain current (ID) rating of 30A, it can handle significant power loads.
This MOSFET is particularly valued for its fast switching speed, which improves the efficiency of power converters and reduces energy losses. Its robust thermal performance allows for reliable operation in demanding environments. The device is housed in a TO-220 package, facilitating easy mounting and heat dissipation.
Applications include power supplies, motor drives, and automotive systems, where efficiency and thermal management are critical. The NTF3055L108T1G is ideal for engineers seeking reliable performance in compact designs.

Features

The NTF3055L108T1G is a N-channel MOSFET designed for power switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 55V.
2. Current Rating: The continuous drain current (I_D) can reach up to 30A, making it suitable for high-power applications.
3. R_DS(on): It boasts a low on-resistance (R_DS(on)) of approximately 0.045Ω at a gate-source voltage (V_GS) of 10V, ensuring efficient operation with minimal power loss.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) is between 2V and 4V, allowing for effective switching with lower gate drive voltages.
5. Package: It is available in a TO-220 package, providing good thermal performance and ease of mounting.
6. High-speed Switching: Designed for fast switching applications, making it suitable for use in power supplies, motor controls, and automotive applications.
These features make the NTF3055L108T1G a robust choice for various electronic designs requiring efficient power management.

Package

The NTF3055L108T1G is packaged in a TO-220 metal can package. This type of package is commonly used for power transistors due to its ability to dissipate heat effectively.

Pinout

The NTF3055L108T1G is a N-channel MOSFET with a pin count of 3. Its primary functions involve switching and amplification in various electronic circuits. The pin configuration is as follows:
1. Gate (G): This pin is used to control the transistor's operation. Applying a voltage to the gate allows current to flow between the drain and source.

2. Drain (D): This pin is where the current enters the MOSFET when it is in the 'on' state. It connects to the load.

3. Source (S): This pin is the output of the MOSFET, where the current exits.
The NTF3055L108T1G is commonly used in power applications due to its high efficiency and fast switching capabilities. Its specifications include a maximum drain-source voltage of 55V and a continuous drain current rating of up to 30A.

Manufacturer

The NTF3055L108T1G is manufactured by ON Semiconductor, a global company that specializes in semiconductor solutions. ON Semiconductor designs and produces a wide range of components, including power management, analog, and digital solutions, primarily serving various industries such as automotive, industrial, consumer electronics, and telecommunications. The company focuses on energy-efficient technologies and aims to enable customers to create innovative products while reducing power consumption.

Application

The NTF3055L108T1G is a N-channel MOSFET primarily used in power management applications. Its common application areas include DC-DC converters, switching power supplies, motor drives, and high-speed switching circuits. It is suitable for automotive, industrial, and consumer electronics due to its efficient performance in handling high voltage and current levels.

Equivalent

The NTF3055L108T1G is a N-channel MOSFET. Equivalent products include:
1. IRF540
2. STP55NF06
3. FQP50N06L
4. AUIRF540N
5. MTP50N06E
Always verify specifications like V_DS, I_D, and R_DS(on) to ensure compatibility.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire