NTF2955T1G

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NTF2955T1G

MOSFET P-CH 60V 1.7A SOT223

  • Fabricant
  • Mfr. Partie #NTF2955T1G
  • Paquet SOT-223-4
  • Fiche de données
  • En stock4284

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 1.7A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 185mOhm @ 2.4A, 10V
Vgs(th)(Max)@Id 4V @ 1mA
GateCharge(Qg)(Max)@Vgs 14.3 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 492 pF @ 25 V
PowerDissipation(Max) 1W (Ta)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage SOT-223 (TO-261)

Vue d'ensemble

Description

The NTF2955T1G is a P-channel MOSFET designed for various electronic applications, including power management and switching. It features a maximum drain-source voltage (V_DS) of -55V and a continuous drain current (I_D) of -5.5A. This device is known for its low on-resistance, which enhances efficiency during operation by minimizing power loss.
Key specifications include a low gate threshold voltage, allowing for better control in low-voltage applications. The NTF2955T1G is housed in a surface-mount TO-252 package, which facilitates thermal management and space-saving in circuit designs.
Common applications include use in power supplies, motor drivers, and load switching. Its robust construction and reliable performance make it suitable for demanding environments. Additionally, the device demonstrates good thermal stability, which is vital for sustaining performance over a range of temperatures. Overall, the NTF2955T1G is a versatile component for engineers seeking efficient and reliable P-channel MOSFET solutions.

Features

The NTF2955T1G is an N-channel MOSFET designed for various applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 55V, making it suitable for medium-voltage applications.
2. Current Rating: The continuous drain current (ID) is rated at 6.5A, allowing it to handle substantial loads.
3. RDS(on): It offers a low on-resistance (RDS(on)) of approximately 0.1 ohms, enhancing efficiency and reducing heat generation during operation.
4. Gate Threshold Voltage: The gate threshold voltage (VGS(th)) ranges between 1V to 2.5V, facilitating operation with low gate drive voltages.
5. Package: It comes in a TO-220 package, which aids in effective thermal management.
6. Applications: Ideal for use in power supplies, motor drivers, and DC-DC converters.
Overall, the NTF2955T1G provides robust performance and efficiency in various electronic applications.

Package

The NTF2955T1G is packaged in a TO-220 package type. This package is designed for power applications, providing effective thermal management and ease of mounting to heat sinks.

Pinout

The NTF2955T1G is a P-channel MOSFET with a total pin count of 3. Its pin configuration is as follows:
1. Gate (G): The control terminal that regulates the flow of current between the source and drain.
2. Source (S): The terminal through which current enters the device; typically connected to the higher potential in P-channel applications.
3. Drain (D): The terminal through which current exits the device; typically connected to the load.
The NTF2955T1G is used in various applications, including power management and switching, due to its low on-resistance and ability to handle high current and voltage levels. The device operates with a maximum drain-source voltage (V_DS) of -60V and a maximum continuous drain current (I_D) of -3.5A.

Manufacturer

The NTF2955T1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in high-performance energy-efficient products, including discrete components, sensors, and integrated circuits. The company focuses on providing innovative solutions for various applications, including automotive, industrial, and consumer electronics. Established in 1999, ON Semiconductor has expanded its portfolio through strategic acquisitions and investments in technology, positioning itself as a key player in the semiconductor industry.

Application

The NTF2955T1G is a P-channel MOSFET commonly used in power management applications, such as switching regulators, load switching, and power routing. Its features make it suitable for applications in battery management systems, DC-DC converters, and motor control circuits. Additionally, it is often employed in consumer electronics and automotive systems for efficient power control and signal switching.

Equivalent

The NTF2955T1G is a P-channel MOSFET. Equivalent products include the IRF9540, PMV20UN, and FQP27P06. Always check specific datasheets for precise specifications, such as voltage ratings and current capacity, to ensure compatibility for your application.

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UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

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