NTD2955T4G

Les images sont à titre de référence seulement

NTD2955T4G

MOSFET P-CH 60V 12A DPAK

  • Fabricant
  • Mfr. Partie #NTD2955T4G
  • Paquet DPAK-3
  • Fiche de données
  • En stock7993

100% original & Nouveau

24 heures prêtes à expédier

Garantie 365 jours

RFQ et Obtenez plus de rabais

Spécifications

Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 12A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 180mOhm @ 6A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 30 nC @ 10 V
Vgs(Max) ±20V
InputCapacitance(Ciss)(Max)@Vds 750 pF @ 25 V
PowerDissipation(Max) 55W (Tj)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Vue d'ensemble

Description

The NTD2955T4G is a P-channel MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) designed for high-speed switching applications. It features low on-resistance and a high voltage rating, making it suitable for power management in various electronic devices. With a maximum drain-source voltage (VDS) of -55V and a continuous drain current (ID) of -9.5A, it is effective for applications such as power supplies, motor drivers, and load switching. The device is housed in a TO-220 package, which allows for efficient thermal dissipation.
Key specifications include a typical gate threshold voltage (VGS(th)) of -0.8V to -2.0V, enabling it to operate well with standard logic levels. The NTD2955T4G's performance characteristics make it a reliable choice for designers seeking efficient power solutions in consumer electronics and industrial applications.

Features

The NTD2955T4G is an N-channel MOSFET designed for a variety of applications, including power management and switching. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 55V, making it suitable for high-voltage applications.
2. Current Rating: The maximum continuous drain current (ID) is 34A, providing robust performance for demanding tasks.
3. RDS(on): It features a low on-resistance (RDS(on)) of approximately 0.016 ohms at a gate-source voltage (VGS) of 10V, ensuring efficient conductivity and minimal power loss.
4. Gate Threshold Voltage (VGS(th)): The gate threshold voltage is between 2V and 4V, allowing for easy drive with standard gate voltages.
5. Packaging: It comes in a TO-220 package, facilitating heat dissipation and mounting flexibility.
6. Applications: Commonly used in DC-DC converters, motor drives, and other power switching applications.
Overall, the NTD2955T4G is a reliable choice for engineers seeking high performance in power electronics designs.

Package

The NTD2955T4G is packaged in a TO-220 package type. This package is known for its effective heat dissipation and is commonly used for power transistors in various applications.

Pinout

The NTD2955T4G is a N-channel MOSFET with a pin count of 3. It is designed for applications such as power management and switching. The pins are typically configured as follows:
1. Gate (G): This pin controls the MOSFET's operation; applying a voltage here allows the device to turn on or off.
2. Drain (D): This pin is where the load connects, allowing current to flow from the drain to the source when the MOSFET is activated.
3. Source (S): This pin connects to ground in common-source configurations, providing a return path for current.
The NTD2955T4G is known for its low on-resistance and high-speed switching capabilities, making it suitable for various electronic applications.

Manufacturer

The NTD2955T4G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including power management, analog, sensors, logic, and discrete components. The company is known for its focus on energy-efficient technologies and is a key player in various markets, including automotive, industrial, and consumer electronics. Founded in 1999, ON Semiconductor has grown through strategic acquisitions and innovation, positioning itself as a leader in the semiconductor industry.

Application

The NTD2955T4G is a N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, power supplies, motor control, and load switching. Additionally, it is suitable for high-efficiency switching applications in consumer electronics, automotive, and industrial systems due to its low on-resistance and fast switching capabilities.

Equivalent

The NTD2955T4G is an N-channel MOSFET. Equivalent products include the IRF9630, STP16NF06, and FQP30N06L. These alternatives share similar voltage and current ratings, but always verify specifications like RDS(on), VGS, and package types for compatibility in your application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

Similaire