NTD24N06LT4G

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NTD24N06LT4G

POWER FIELD-EFFECT TRANSISTOR, 2

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Spécifications

Supplier Rochester Electronics, LLC
Package Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 24A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 5V
RdsOn(Max)@IdVgs 45mOhm @ 10A, 5V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 32 nC @ 5 V
Vgs(Max) ±15V
InputCapacitance(Ciss)(Max)@Vds 1140 pF @ 25 V
PowerDissipation(Max) 1.36W (Ta), 62.5W (Tj)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Vue d'ensemble

Description

The NTD24N06LT4G is a N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-efficiency switching applications. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of 24A, making it suitable for power management in various electronic circuits. With a low on-resistance (R_DS(on)), it minimizes power losses during operation, enhancing overall device efficiency.
This MOSFET is typically used in applications such as power supplies, motor drivers, and other power electronics where fast switching and high efficiency are critical. The device is packaged in a TO-220 format, which allows for effective heat dissipation, further improving performance in demanding applications.
The NTD24N06LT4G is also characterized by its high speed and can be driven by standard logic-level signals, making it user-friendly in design implementations. Overall, it is an excellent choice for engineers seeking reliable performance in power management solutions.

Features

The NTD24N06LT4G is an N-channel MOSFET designed for high-efficiency switching applications. Key features include:
1. Voltage Rating: Rated for a maximum drain-source voltage (V_DS) of 60V, making it suitable for various power management applications.
2. Continuous Drain Current: Offers a continuous current (I_D) capability of up to 24A, allowing it to handle substantial loads.
3. Low On-Resistance: Has a low R_DS(on) of approximately 0.025 ohms at a gate-source voltage (V_GS) of 10V, which minimizes power loss during operation.
4. Fast Switching Speed: Suitable for high-speed switching applications, enhancing efficiency in power converters and motor drivers.
5. Thermal Performance: Comes in a TO-220 package, providing good thermal dissipation capabilities.
6. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 2V to 4V, enabling it to be driven easily by low-voltage logic circuits.
Overall, the NTD24N06LT4G is ideal for applications like power management, switch-mode power supplies, and motor control systems.

Package

The NTD24N06LT4G is packaged in a TO-220 format. This type of package is designed for power MOSFETs, providing good thermal performance and ease of mounting to heatsinks for effective heat dissipation.

Pinout

The NTD24N06LT4G is an N-channel MOSFET with a pin count of 3. The pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate allows current to flow from the drain to the source.
2. Drain (D): This pin is the output where the load is connected. Current flows out of this pin when the MOSFET is turned on.
3. Source (S): This pin is connected to ground or the lower potential in the circuit. Current enters the MOSFET through this pin when the device is activated.
The NTD24N06LT4G is designed for applications in power management and switching, with a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) of 24A. It is commonly used in automotive and industrial applications for controlling motors, lights, and other loads.

Manufacturer

The manufacturer of the NTD24N06LT4G is ON Semiconductor, a global semiconductor company. ON Semiconductor specializes in designing and manufacturing a broad range of semiconductor-based solutions, including power management, analog, and mixed-signal devices. The company serves various industries, including automotive, industrial, communications, and consumer electronics, focusing on energy-efficient and high-performance technologies.

Application

The NTD24N06LT4G is an N-channel MOSFET primarily used in power management applications, such as switching power supplies, motor drivers, and LED drivers. Its low on-resistance and high efficiency make it suitable for automotive, industrial, and consumer electronics applications, enabling effective control of power in devices like inverters, DC-DC converters, and power distribution circuits.

Equivalent

The NTD24N06LT4G is an N-channel MOSFET. Equivalent products include:
1. IRF240
2. STP24NM06
3. FQP24N06L
4. BUK956-100A
5. RFP30N06
Always check specific parameters like voltage, current ratings, and R_DS(on) to ensure compatibility for your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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