NTD18N06LT4G

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NTD18N06LT4G

MOSFET N-CH 60V 18A DPAK

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Spécifications

Supplier onsemi,Rochester Electronics, LLC
Package Tape & Reel (TR),Cut Tape (CT),Bulk
ProductStatus Active
FETType N-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 18A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 5V
RdsOn(Max)@IdVgs 65mOhm @ 9A, 5V
Vgs(th)(Max)@Id 2V @ 250µA
GateCharge(Qg)(Max)@Vgs 22 nC @ 5 V
Vgs(Max) ±15V
InputCapacitance(Ciss)(Max)@Vds 675 pF @ 25 V
PowerDissipation(Max) 2.1W (Ta), 55W (Tj)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage DPAK

Vue d'ensemble

Description

The NTD18N06LT4G is a high-performance N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for a variety of applications, including power management and switching. It features a maximum drain-source voltage (V_DS) of 60V and a continuous drain current (I_D) rating of 18A, making it suitable for high-voltage and high-current scenarios.
Key specifications include a low on-resistance (R_DS(on)), which minimizes power loss and improves efficiency during operation. Additionally, it has a fast switching speed, making it ideal for applications such as DC-DC converters, motor drives, and power supplies. The device is housed in a TO-220 package, facilitating efficient heat dissipation.
Due to its robust design and reliability, the NTD18N06LT4G is commonly used in automotive, industrial, and consumer electronics. Its performance characteristics enable it to handle demanding applications, contributing to overall system efficiency and reliability.

Features

The NTD18N06LT4G is an N-channel MOSFET designed for various applications including power management and switching. Key features include:
1. Voltage Rating: It can handle up to 60V, making it suitable for various high-voltage applications.
2. Current Rating: It supports a continuous drain current of 18A, providing robust performance in high-current scenarios.
3. RDS(on): The on-resistance is low, typically around 0.18 ohms at a gate-source voltage of 10V, which reduces power loss during operation.
4. Gate Threshold Voltage: The gate threshold voltage ranges from 2V to 4V, allowing for efficient driving from low-voltage logic levels.
5. Package Type: It comes in a TO-220 package, ensuring effective thermal dissipation.
6. Fast Switching: This MOSFET features fast switching speeds, making it suitable for high-frequency applications.
Overall, the NTD18N06LT4G is ideal for power electronics, motor control, and other applications requiring efficient switching performance and thermal management.

Package

The NTD18N06LT4G is packaged in a TO-220 form factor. This package type is commonly used for high-power applications, providing efficient heat dissipation and easy mounting to heatsinks.

Pinout

The NTD18N06LT4G is an N-channel MOSFET with a total of 4 pins. Its pin configuration is as follows:
1. Gate (G): This pin is used to control the MOSFET, allowing it to switch on and off by applying a voltage.
2. Drain (D): This pin connects to the load and is where the current flows out of the MOSFET when it is turned on.
3. Source (S): This pin is connected to the ground or negative side of the power supply, allowing current to flow into the drain when the device is activated.
The NTD18N06LT4G is designed for applications such as power switching and motor control, with a maximum drain-source voltage of 60V and a continuous drain current rating of 18A. It features low on-resistance, making it suitable for efficient power management.

Manufacturer

The NTD18N06LT4G is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in the design and manufacture of a wide range of semiconductor components, including power management devices, sensors, and various integrated circuits. The company serves multiple markets, including automotive, industrial, communications, and consumer electronics. They are known for their commitment to innovation, energy efficiency, and sustainable technologies in the semiconductor industry.

Application

The NTD18N06LT4G is an N-channel MOSFET primarily used in power management applications. Its key areas include DC-DC converters, motor control, switching power supplies, and high-efficiency power systems. It is suitable for use in automotive, industrial, and consumer electronics due to its high voltage and current handling capabilities, low thermal resistance, and fast switching speeds.

Equivalent

The NTD18N06LT4G is a N-channel MOSFET with a 60V, 18A rating. Equivalent products include the STP18NF06, IRF840, and FQP18N06. Always verify specifications like R_DS(on), V_GS(th), and package type to ensure compatibility for your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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