NTB25P06T4G

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NTB25P06T4G

MOSFET P-CH 60V 27.5A D2PAK

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Spécifications

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
FETType P-Channel
Technology MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 60 V
Current-ContinuousDrain(Id)@25°C 27.5A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 10V
RdsOn(Max)@IdVgs 82mOhm @ 25A, 10V
Vgs(th)(Max)@Id 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 50 nC @ 10 V
Vgs(Max) ±15V
InputCapacitance(Ciss)(Max)@Vds 1680 pF @ 25 V
PowerDissipation(Max) 120W (Tj)
OperatingTemperature -55°C ~ 175°C (TJ)
MountingType Surface Mount
SupplierDevicePackage D²PAK

Vue d'ensemble

Description

The NTB25P06T4G is a P-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various power management applications. It features a maximum continuous drain current of 25A and a source-drain voltage rating of -60V, making it suitable for high-side switching in power supply circuits. The device has a low R_DS(on) (on-resistance), which minimizes power loss and heat generation during operation.
Key specifications include a gate threshold voltage (V_GS(th)) of -2V to -4V, allowing for easy interfacing with microcontrollers or logic circuits. Its package type, typically a TO-220 or similar, facilitates efficient heat dissipation. The NTB25P06T4G is commonly used in applications such as motor control, power management systems, and automotive electronics.
Overall, the NTB25P06T4G is a versatile component ideal for designers seeking reliability and efficiency in their electronic designs.

Features

The NTB25P06T4G is a P-channel MOSFET that features the following key attributes:
1. Type: P-channel MOSFET, suitable for high-side switching applications.
2. Voltage Rating: Maximum gate-source voltage of -20V and a drain-source voltage (V_DS) of -60V.
3. Current Rating: Continuous drain current (I_D) is around -25A, which allows for robust handling of load.
4. R_DS(on): Low on-resistance typically around 0.1 ohms, enhancing efficiency by minimizing conduction losses.
5. Gate Threshold Voltage: Typically between -2V to -4V, enabling easy control with low-voltage signals.
6. Package: Available in a TO-220 package, offering good thermal performance and ease of heat dissipation.
7. Applications: Commonly used in power management, motor control, and switching power supplies.
This combination of features makes the NTB25P06T4G suitable for various electronic applications requiring efficient switching and power management.

Package

The NTB25P06T4G is packaged in a TO-220 style package. This type of package is designed for efficient thermal management and is commonly used for power semiconductor devices.

Pinout

The NTB25P06T4G is a P-channel power MOSFET with a total of three pins. The pin functions are as follows:
1. Gate (G): This pin controls the MOSFET's operation by applying a voltage to turn it on or off.
2. Source (S): This is the terminal where the power supply voltage is applied. It is connected to the higher potential relative to the drain during operation.
3. Drain (D): This pin is connected to the load. When the MOSFET is turned on, current flows from the source to the drain.
The device is often used in applications requiring efficient switching and power management. It features a low on-resistance, making it suitable for high-efficiency applications.

Manufacturer

The NTB25P06T4G is manufactured by ON Semiconductor, a global semiconductor company headquartered in Phoenix, Arizona. ON Semiconductor specializes in designing and manufacturing a wide range of innovative semiconductor solutions, including power management, analog, logic, and discrete devices. The company serves various industries, such as automotive, industrial, communications, and consumer electronics, focusing on energy-efficient technologies and providing components for applications that require high reliability and performance.

Application

The NTB25P06T4G is a P-channel MOSFET commonly used in power management applications, including battery management systems, motor control, and switching power supplies. Its low on-resistance and high voltage rating make it suitable for switching and amplifying signals in electronic circuits. Additionally, it can be employed in load control and power distribution systems, enhancing energy efficiency in various consumer electronics and industrial applications.

Equivalent

The NTB25P06T4G is a P-channel MOSFET. Equivalent products include IRF9520, FQP27P06, and STP25P06. Always verify specifications such as voltage, current rating, and package type for compatibility.

Expédition

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DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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