NT6AN256T32AV-J2

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NT6AN256T32AV-J2

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Spécifications

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
HTS EA
Automotive Unknown
PPAP Unknown
Mounting Surface Mount
Package Height 0.48(Max)
Package Width 10
Package Length 15
PCB changed 200
Standard Package Name BGA
Supplier Package FBGA
Pin Count 200

Vue d'ensemble

Description

The NT6AN256T32AV-J2 is a memory module produced by Nanya Technology, specifically designed for high-performance applications. It is a 256MB (megabyte) DDR SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) chip, featuring a 32-bit data width. Designed for use in various computing environments, this memory module provides efficient data processing capabilities, making it suitable for both consumer and industrial applications.
Key specifications typically include a clock speed of 166 MHz, which allows for improved data transfer rates compared to older memory technologies. The NT6AN256T32AV-J2 is compatible with various motherboards and systems that support DDR SDRAM, enhancing system performance through increased memory bandwidth.
This module is often used in devices requiring moderate memory capacity, such as entry-level PCs, embedded systems, and networking hardware. Its design focuses on reliability and efficiency, contributing to the overall performance of computing systems.

Features

The NT6AN256T32AV-J2 is a DRAM chip featuring 256Mb (megabits) of memory capacity, organized as 32 Meg x 8 bits. It is part of the DDR2 SDRAM family, which provides high-speed data transfer rates, typically ranging from 400 to 800 MT/s (megatransfers per second). This memory operates on a 1.8V supply voltage, ensuring lower power consumption compared to older DDR technologies.
Key features include:
- Memory Density: 256Mb
- Organization: 32M x 8
- Technology: DDR2 SDRAM
- Data Rate: Up to 800 MT/s
- Voltage: 1.8V
- Package Type: Usually available in a standard TSOP-II package.
The NT6AN256T32AV-J2 is suitable for applications requiring efficient, high-performance memory solutions, such as consumer electronics, computing devices, and networking equipment. Its design emphasizes reliability and performance, making it a popular choice for various electronic applications.

Package

The NT6AN256T32AV-J2 is packaged in a 78-ball TFBGA (Thin Fine Pitch Ball Grid Array) format. This type of package is designed for high-density memory applications, providing a compact and efficient layout for integrated circuit connections.

Pinout

The NT6AN256T32AV-J2 is a DDR3 SDRAM memory chip with a pin count of 78. It is organized as 256 Meg x 32 bits, providing a total capacity of 2 gigabits. The primary function of this chip is to serve as high-speed volatile memory for various applications, including computers and other electronic devices, enabling efficient data storage and retrieval during operation. It supports a range of data rates and operates at a voltage of 1.5V.

Manufacturer

The manufacturer of the NT6AN256T32AV-J2 is Nanya Technology Corporation. Nanya is a Taiwanese company that specializes in the design and manufacturing of dynamic random-access memory (DRAM) products and related semiconductor solutions. Founded in 1995, Nanya primarily focuses on DRAM production for various applications, including computers, mobile devices, and other consumer electronics. The company is known for its commitment to research and development, aiming to advance memory technologies and enhance performance in the semiconductor industry. Nanya is recognized as one of the leading DRAM manufacturers globally.

Application

The NT6AN256T32AV-J2 is a DDR3 SDRAM memory chip primarily used in applications such as computer memory (PCs, servers), embedded systems, and networking devices. It is ideal for high-performance tasks requiring fast data processing and storage, including gaming systems, graphics applications, and data-intensive operations in telecommunication equipment. Additionally, it may be used in automotive and industrial applications where reliable memory performance is crucial.

Equivalent

The NT6AN256T32AV-J2 is a DDR3 SDRAM memory chip. Equivalent products include:
1. Hynix H5TQ2G63AFR-H9C
2. Micron MT41J256M16HA-125
3. Samsung K4B4G1646F-BCK0
When considering alternatives, ensure that specifications like speed, capacity, and package type match your requirements. Always verify compatibility with your specific application.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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