NT6AN256M16AV-J2

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NT6AN256M16AV-J2

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Spécifications

EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
HTS EA
Automotive Unknown
PPAP Unknown
Chip Density (bit) 4G
Number of Bits/Word (bit) 16
Interface Type LVSTL
Minimum Operating Supply Voltage (V) 1.06|1.7
Maximum Operating Supply Voltage (V) 1.17|1.95
Operating Current (mA) 280
Minimum Operating Temperature (°C) -30
Maximum Operating Temperature (°C) 105
Mounting Surface Mount
Package Height 0.48(Max)
Package Width 10
Package Length 15
PCB changed 200
Standard Package Name BGA
Supplier Package FBGA
Pin Count 200
DRAM Type Mobile LPDDR4 SDRAM
Organization 256Mx16
Number of Internal Banks 8
Number of Words per Bank 32M
Data Bus Width (bit) 16
Maximum Clock Rate (MHz) 3733
Maximum Access Time (ns) 3.6
Address Bus Width (bit) 18
Number of I/O Lines (bit) 16
Supplier Temperature Grade Commercial

Vue d'ensemble

Description

The NT6AN256M16AV-J2 is a DRAM (Dynamic Random Access Memory) module designed for high-performance computing applications. Specifically, it is a DDR3 SDRAM chip with a capacity of 256 Megabits (32 Megabytes) organized in a 16-bit wide interface. Operating at multiple voltage levels, it supports data transfer rates that enhance system performance, making it suitable for applications like servers, workstations, and high-end consumer electronics.
Key features include low power consumption, which makes it ideal for energy-efficient designs, and advanced error-correction capabilities, improving data integrity. The module is often used in conjunction with memory controllers to facilitate quick data access and efficient multitasking in modern computing environments.
Its packaging typically follows industry standards, enabling easy integration into various hardware platforms. Overall, the NT6AN256M16AV-J2 represents a reliable solution for enhancing memory capacity and speed in digital devices.

Features

The NT6AN256M16AV-J2 is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) module designed for high-performance computing applications. Here are its key features:
1. Density: 256 Megabytes (MB) per chip with a configuration of 16 bits.
2. Speed: Operates at speeds up to 1066 MT/s (Million Transfers per second), ensuring efficient data transfer rates.
3. Voltage: Typically operates at a low voltage of 1.5V, contributing to reduced power consumption.
4. Package: Available in a small form factor, often in a TSOP (Thin Small Outline Package) for easier integration into devices.
5. Architecture: Supports a 4-bank architecture, enhancing performance through parallel access.
6. Compatibility: Designed to meet industry standards, making it compatible with a wide range of DDR3 applications.
7. Temperature Range: Suitable for industrial and commercial temperature ranges, allowing for versatile applications.
These features make the NT6AN256M16AV-J2 suitable for various computing tasks, including embedded systems, telecommunications, and consumer electronics.

Package

The NT6AN256M16AV-J2 is a DDR3 SDRAM memory chip packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format.

Pinout

The NT6AN256M16AV-J2 is a memory chip with a pin count of 54 pins. It is a DDR3 SDRAM (Synchronous Dynamic Random Access Memory) device. The primary functions of this chip include providing data storage for various applications, supporting high-speed data transfer rates, and enabling efficient memory management in computing systems. The device typically features a memory capacity of 256 Megabits (32 Megabytes) organized in a 16-bit wide data bus configuration. Its pins are used for power supply, ground, data input/output, and control signals essential for operation and communication with the host system.

Manufacturer

The NT6AN256M16AV-J2 is manufactured by Nanya Technology Corporation. Nanya is a Taiwanese company that specializes in the design and production of dynamic random-access memory (DRAM) products. Founded in 1995, Nanya is known for providing high-quality memory solutions for various applications, including computers, mobile devices, and networking equipment. They focus on DRAM development, production, and distribution, catering primarily to the global semiconductor market. Nanya is recognized for its commitment to innovation and quality in the memory industry.

Application

The NT6AN256M16AV-J2 is a high-density DDR3 SDRAM memory chip primarily used in computing applications such as laptops, desktops, and servers. Its application areas include data storage in consumer electronics, networking devices, and embedded systems, enhancing performance in tasks requiring fast data processing and multitasking.

Equivalent

The NT6AN256M16AV-J2 chip is a 256Mb DDR2 SDRAM memory chip. Equivalent products include:
1. MT47H256M16RT-25E
2. K4T1G164QE-HC3
3. Hynix HY5PS25621BFP-D43
4. Samsung K4T1G164QE-HCE7
These alternatives offer similar specifications, such as capacity, architecture, and speed. Always verify compatibility with your specific application.

Expédition

Méthodes d'expéditionNous

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire