NT5CB128M16JR-FL

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NT5CB128M16JR-FL

2Gbit 1.066GHz DDR3 SDRAM TFBGA-96 Memory (ICs) RoHS

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Spécifications

Packaging TFBGA-96
Clock Frequency 1.066GHz
Memory Format DDR3 SDRAM
Memory Size 2Gbit
Operating temperature 0℃~+95℃
Voltage - Supply 1.425V~1.575V;1.283V~1.45V

Vue d'ensemble

Description

The NT5CB128M16JR-FL is a DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) module, specifically designed for high-performance applications. It is a 1Gb (gigabit) memory chip organized as 128M x 16 bits, making it suitable for various computing devices, including desktops, laptops, and servers. The "FL" designation indicates that it is a fine-pitch ball grid array (FBGA) package.
This memory operates at low voltage (1.5V) and supports data rates from 800 to 1600 MT/s (million transfers per second), which enhances overall system performance. Its features include burst mode operation, programmable latency, and on-die termination (ODT), ensuring efficient data handling and power management. The NT5CB128M16JR-FL is commonly used in applications requiring reliable, high-speed memory with lower power consumption, making it a popular choice in modern electronics.

Features

The NT5CB128M16JR-FL is a DDR3 SDRAM memory chip, specifically a 1GB (128M x 16) device, designed for high-performance applications. It operates at a voltage of 1.5V and supports data rates up to 1600 MT/s. Key features include:
- Density: 1GB capacity with 128M x 16 organization.
- Speed: Compatible with DDR3-1600/1333/1066 speeds.
- Package: Offered in a 78-ball FBGA (Fine Ball Grid Array) package for compact designs.
- Operating Temperature: Typically supports a range from -40°C to 85°C, making it suitable for industrial applications.
- Data Integrity: Supports features like on-die termination (ODT) and is compliant with JEDEC standards for reliability.
- Applications: Ideal for use in consumer electronics, networking, and industrial equipment.
The NT5CB128M16JR-FL is characterized by its efficiency and high bandwidth, meeting the demands of modern computing systems.

Package

The NT5CB128M16JR-FL is packaged in a 78-ball TFBGA (Thin Fine Ball Grid Array) format. This package type is designed for compactness and efficient thermal management in memory applications.

Pinout

The NT5CB128M16JR-FL is a 1Gb (Gigabit) DDR3 SDRAM memory chip with a pin count of 78. This device is organized as 128M x 16 bits and operates at a voltage of 1.5V.
The primary functions of the pins include:
- Data I/O Pins (DQ): Used for data input and output during read and write operations.
- Address Pins (A): Used to select memory addresses for read and write operations.
- Control Pins (CS, RAS, CAS, WE): Control signals for memory operations.
- Clock Pins (CK, CK#): Provide the clock signal necessary for synchronization.
- Power and Ground Pins (VDD, VSS): Supply power to the chip and ground reference.
This chip is typically used in various applications such as computers, servers, and embedded systems requiring DRAM memory.

Manufacturer

The NT5CB128M16JR-FL is manufactured by Nanya Technology Corporation. Nanya is a Taiwanese company that specializes in the design and production of DRAM (Dynamic Random Access Memory) products. Founded in 1995, Nanya is recognized for its expertise in memory solutions, producing various types of DRAM including standard DRAM, graphics DRAM, and specialty memory chips. The company serves a wide range of industries, including consumer electronics, computers, and telecommunications, and is known for its commitment to innovation and quality in memory technology. Nanya is one of the significant players in the global semiconductor market, contributing to advancements in memory design and manufacturing.

Application

The NT5CB128M16JR-FL is a 1GB DDR3 SDRAM (Double Data Rate Synchronous Dynamic Random Access Memory) chip commonly used in applications such as laptops, desktop computers, servers, and embedded systems. It provides high-speed memory for data-intensive tasks, including gaming, graphic design, and data processing, and is suitable for use in consumer electronics, networking equipment, and telecommunications devices.

Equivalent

The NT5CB128M16JR-FL is a 1Gb DDR3 SDRAM memory chip. Equivalent products include Micron MT41K128M16HA-125, Samsung K4B4G1646D-BCK0, and Hynix H5TQ2G83EFR. Ensure compatibility with your specific application, as variations in speed, voltage, and package type may exist.

Expédition

Méthodes d'expéditionNous

offrir des services d'expédition mondiaux par DHL, FedEx, TNT, UPS ou tout autre expéditeur de votre choix.


Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

Payment Methods

Le terme de paiement est 100% prépayé.

Actuellement, nous n'acceptons que les méthodes de paiement ci-dessous:

1. PayPal

2. Carte de crédit/débit

3. Transfert bancaire

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