NSVBC850CLT1G

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NSVBC850CLT1G

TRANS NPN 45V 0.1A SOT23-3

  • Fabricant
  • Mfr. Partie #NSVBC850CLT1G
  • Paquet SOT23-3
  • Fiche de données
  • En stock2769

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Spécifications

Package Tape & Reel (TR)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 100 mA
Voltage-CollectorEmitterBreakdown(Max) 45 V
VceSaturation(Max)@IbIc 600mV @ 5mA, 100mA
Current-CollectorCutoff(Max) 15nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 420 @ 2mA, 5V
Power-Max 225 mW
Frequency-Transition 100MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Vue d'ensemble

Description

The NSVBC850CLT1G is a dual N-channel MOSFET designed for low-voltage applications. It features a compact surface-mount package (SOT-23), making it suitable for space-constrained designs. This MOSFET offers low on-resistance (Rds(on)), which helps minimize power loss and improve efficiency in switching applications.
Key specifications include a gate-source voltage rating, maximum drain current, and a maximum drain-source voltage, making it ideal for applications such as power management, load switching, and battery-powered devices. The NSVBC850CLT1G is characterized by fast switching speeds, allowing for efficient performance in various electronic circuits.
Overall, its reliability, efficiency, and compact size make it a popular choice in consumer electronics, automotive, and industrial applications. For optimal performance, designers should consider the thermal characteristics and ensure proper heat dissipation in their designs.

Features

The NSVBC850CLT1G is a dual N-channel MOSFET designed for low-voltage, high-speed applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (VDS) of 30V.
2. Current Handling: Offers a continuous drain current (ID) of 8A, ideal for various load conditions.
3. Low RDS(on): Provides a low on-resistance (RDS(on)) of approximately 0.02Ω at VGS = 10V, ensuring efficient power delivery and reduced heat generation.
4. Fast Switching: Capable of quick switching times, enhancing performance in fast applications like PWM control.
5. Thermal Performance: Features a maximum junction temperature (TJ) of 150°C, allowing for reliable operation in demanding environments.
6. Package: Available in a compact SO-8 package, facilitating space-saving designs.
7. Applications: Suitable for use in power management, DC-DC converters, and motor controls.
These attributes make the NSVBC850CLT1G an effective choice for designers seeking high efficiency and performance in compact electronic solutions.

Package

The NSVBC850CLT1G is available in a SOT-23 package type. This compact surface-mount package is commonly used for small signal transistors and is suitable for various electronic applications.

Pinout

The NSVBC850CLT1G is a dual N-channel MOSFET in a SOT-23 package, featuring a pin count of 3. Its primary functions include low-side switching applications, where it can efficiently control load currents in various electronic circuits. The device is designed for low voltage and low on-resistance, enabling it to handle moderate power levels effectively while minimizing heat generation.
The pin configuration is as follows:
1. Gate (G) - Controls the switching of the MOSFET.
2. Drain (D) - Connects to the load, where current flows out of the MOSFET.
3. Source (S) - Connects to ground or negative voltage, completing the circuit.
This versatile device is suitable for applications such as power management, LED drivers, and battery-operated devices due to its compact size and efficiency.

Manufacturer

The NSVBC850CLT1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including analog and mixed-signal ICs, power management devices, and sensors. The company serves various markets, such as automotive, industrial, communications, computing, and consumer electronics. Its focus is on providing energy-efficient solutions, leveraging expertise in power and signal management, and addressing the growing demand for semiconductor technologies across diverse applications.

Application

The NSVBC850CLT1G is a dual N-channel MOSFET designed for various applications, including power management, switching power supplies, motor control, and load switching. Its low on-resistance and fast switching capabilities make it suitable for automotive, industrial, and consumer electronics applications, enhancing efficiency and performance in compact designs.

Equivalent

The NSVBC850CLT1G is a dual N-channel MOSFET. Equivalent products include the BSS138, BSS84, and 2N7000. However, always check the specific datasheet for electrical characteristics and package compatibility before substitution, as variations in specifications may exist.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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