NSS1C201LT1G

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NSS1C201LT1G

TRANS NPN 100V 2A SOT23-3

  • Fabricant
  • Mfr. Partie #NSS1C201LT1G
  • Paquet SOT23-3
  • Fiche de données
  • En stock4046

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
TransistorType NPN
Current-Collector(Ic)(Max) 2 A
Voltage-CollectorEmitterBreakdown(Max) 100 V
VceSaturation(Max)@IbIc 150mV @ 200mA, 2A
Current-CollectorCutoff(Max) 100nA (ICBO)
DCCurrentGain(hFE)(Min)@IcVce 120 @ 500mA, 2V
Power-Max 490 mW
Frequency-Transition 110MHz
OperatingTemperature -55°C ~ 150°C (TJ)
MountingType Surface Mount
Package/Case TO-236-3, SC-59, SOT-23-3

Vue d'ensemble

Description

The NSS1C201LT1G is a low-power, single N-channel MOSFET (metal-oxide-semiconductor field-effect transistor) designed for various electronic applications. It features low on-resistance, which helps minimize power loss and heat generation during operation, making it suitable for efficient energy management in portable devices, power supplies, and motor control.
This MOSFET operates with a maximum drain-source voltage (Vds) of 20V and can handle continuous drain currents up to 2.3A, depending on the specific thermal conditions. Its compact package design (usually in a SOT-23 format) allows for easy integration into tight spaces on circuit boards.
The NSS1C201LT1G is commonly used in applications such as load switching, LED drivers, and battery management systems, where space and power efficiency are critical. Its fast switching speeds also make it suitable for high-frequency applications. Overall, it is a versatile component in modern electronic design.

Features

The NSS1C201LT1G is a Schottky diode that features a low forward voltage drop, making it efficient for high-speed switching applications. It has a reverse voltage rating of 20V and a forward current rating of 200mA, ideal for use in power management circuits, DC-DC converters, and other electronic devices.
Key features include:
- Low Forward Voltage Drop: Typically around 0.3V, which enhances efficiency.
- High Switching Speed: Suitable for high-frequency applications.
- Temperature Range: Operates effectively across a wide temperature range (-55°C to +150°C).
- Surface Mount Package: Available in a compact SOD-523 package, facilitating space-saving designs.
- Low Reverse Leakage Current: Ensures minimal power loss during operation.
This diode is commonly used in mobile devices, LED lighting, and other compact electronic applications where efficiency and quick response are critical.

Package

The NSS1C201LT1G is packaged in a SOT-23 form factor.

Pinout

The NSS1C201LT1G is a P-channel MOSFET designed for low voltage applications. It comes in a small SOT-23 package with a pin count of 3. The pins are typically configured as follows:
1. Gate (G): This pin controls the MOSFET operation by applying a voltage to turn it on or off.
2. Source (S): This pin is connected to the higher potential side of the circuit. In P-channel MOSFETs, the source is usually at a higher voltage than the drain.
3. Drain (D): This pin is connected to the load and allows current to flow when the MOSFET is turned on by the gate signal.
The NSS1C201LT1G is widely used in applications such as switching, load driving, and low-side switching in various electronic circuits.

Manufacturer

The NSS1C201LT1G is manufactured by ON Semiconductor, a prominent semiconductor company based in Phoenix, Arizona, USA. ON Semiconductor specializes in designing and manufacturing a wide range of semiconductor components, including power management, logic, and discrete devices, which are utilized in various applications such as automotive, industrial, consumer electronics, and communications. The company focuses on providing energy-efficient solutions and is known for its commitment to innovation in the semiconductor industry. ON Semiconductor serves a diverse customer base and aims to support the growing demand for advanced technology in an increasingly connected world.

Application

The NSS1C201LT1G is a Schottky diode commonly used in applications such as power management, rectification in switch-mode power supplies, protection circuits, and RF applications. Its low forward voltage drop and fast switching speeds make it suitable for high-efficiency applications in consumer electronics, automotive systems, and telecommunications.

Equivalent

The NSS1C201LT1G is a low ON-resistance N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and Si2302. However, ensure to verify specifications such as voltage rating, current handling, and package type for compatibility in specific applications.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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