NSR02100HT1G

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NSR02100HT1G

DIODE SCHOTTKY 100V 200MA SOD323

  • Fabricant
  • Mfr. Partie #NSR02100HT1G
  • Paquet SC-76,SOD-323
  • Fiche de données
  • En stock4613

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Spécifications

Package Tape & Reel (TR),Cut Tape (CT)
ProductStatus Active
DiodeType Schottky
Voltage-DCReverse(Vr)(Max) 100 V
Current-AverageRectified(Io) 200mA (DC)
Voltage-Forward(Vf)(Max)@If 950 mV @ 200 mA
Speed Small Signal =< 200mA (Io), Any Speed
Current-ReverseLeakage@Vr 150 nA @ 100 V
Capacitance@VrF 4pF @ 1V, 1MHz
MountingType Surface Mount
Package/Case SC-76, SOD-323
SupplierDevicePackage SOD-323

Vue d'ensemble

Description

The NSR02100HT1G is a N-channel MOSFET designed for various applications in power management and switching. It is particularly notable for its low on-resistance (R_DS(on)), which enhances efficiency by reducing power losses during operation. This MOSFET typically features a maximum drain-source voltage (V_DS) rating of 20V and a continuous drain current (I_D) rating of 2.5A at a temperature of 25°C.
The device is housed in a compact SOT-23 package, making it suitable for space-constrained applications. It offers fast switching speeds and is ideal for low-voltage applications such as load switching, DC-DC converters, and battery management systems.
The NSR02100HT1G is also characterized by low gate threshold voltage, allowing it to be driven easily by low-voltage control signals. Overall, this MOSFET is a reliable choice for efficient power management in consumer electronics, automotive, and industrial applications.

Features

The NSR02100HT1G is an N-channel MOSFET designed for various switching applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (VDS) of 20V, suitable for low-voltage applications.
2. Current Handling: The device can handle continuous drain current (ID) up to 10A, making it versatile for different loads.
3. RDS(on): It offers a low on-resistance (RDS(on)) typically around 30 mΩ, which enhances efficiency by reducing power losses.
4. Package Type: Housed in a standard SOT-23 package, it provides a compact footprint for space-constrained designs.
5. Gate Threshold Voltage (VGS(th)): It features a low gate threshold voltage, allowing it to be driven effectively by low-voltage logic levels.
6. Fast Switching: Designed for fast switching applications, it’s suitable for DC-DC converters and motor control circuits.
Overall, the NSR02100HT1G is ideal for high-efficiency power management solutions.

Package

The NSR02100HT1G is typically packaged in a SOT-23 package type, which is a small, surface-mount plastic package widely used for integrated circuits and discrete components.

Pinout

The NSR02100HT1G is an N-channel MOSFET from ON Semiconductor, featuring a pin count of 2. The functions of its pins are as follows:
1. Gate (G): This pin is used to control the MOSFET. A voltage applied to the gate relative to the source allows the MOSFET to turn on or off, controlling the flow of current between the drain and source.
2. Source (S): This pin is the terminal through which the current enters the MOSFET when it is in the 'on' state.
3. Drain (D): This pin is where the current exits the MOSFET when it is conducting.
The NSR02100HT1G is designed for applications that require efficient switching and low on-resistance, making it suitable for power management in various electronic devices. Its compact package and performance characteristics enhance efficiency in circuit designs.

Manufacturer

The NSR02100HT1G is manufactured by ON Semiconductor, a global supplier of semiconductor-based solutions. ON Semiconductor specializes in a wide range of products, including power management, signal management, logic, discrete, and custom devices. The company focuses on providing high-performance and energy-efficient solutions for various applications, including automotive, industrial, and consumer electronics. Established in 1999 and headquartered in Phoenix, Arizona, ON Semiconductor has a strong commitment to innovation and sustainability, catering to the growing demand for advanced technology in the electronics industry.

Application

The NSR02100HT1G is a N-channel MOSFET commonly used in applications such as power management, load switching, DC-DC converters, and inverters. Its high efficiency and low on-resistance make it suitable for battery-powered devices, consumer electronics, and automotive applications, including electric vehicles. Additionally, it can be utilized in power supplies and industrial equipment for improved performance and energy savings.

Equivalent

The NSR02100HT1G is a N-channel MOSFET. Equivalent products include the BSS138, 2N7000, and BS170. These alternatives offer similar voltage and current ratings, but it's important to check specific parameters like V_DS, I_D, and R_DS(on) to ensure compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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