NSI1306M25-DSWR

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NSI1306M25-DSWR

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Spécifications

Manufacturer NOVOSENSE
Package SOP-16-300mil

Vue d'ensemble

Description

The NSI1306M25-DSWR is a high-performance N-channel MOSFET designed for various applications, including power management, switching, and amplification. Featuring a low on-resistance (R_DS(on)) and high-speed switching capabilities, it ensures efficient performance in circuit designs. With a maximum drain-source voltage of 25V and continuous drain current ratings typically up to 30A, this MOSFET is suitable for automotive, industrial, and consumer electronics.
The device is encapsulated in a compact SO-8 package, facilitating easy integration into space-constrained designs. Its thermal characteristics allow for effective heat dissipation, which is crucial for maintaining performance under load. The NSI1306M25-DSWR also includes a gate threshold voltage that enables operation with low drive voltages, enhancing compatibility with modern microcontrollers and logic devices.
Overall, it is an excellent choice for applications requiring robust performance, reliability, and efficiency in switching operations.

Features

The NSI1306M25-DSWR is a high-voltage, dual N-channel MOSFET designed for efficient power management in various applications. Key features include:
1. Voltage Rating: Supports a maximum drain-source voltage (V_DS) of 30V, making it suitable for low to medium voltage applications.
2. Current Rating: Capable of handling continuous drain currents up to 16A, ensuring robust performance in demanding environments.
3. Low R_DS(on): Provides low on-resistance (R_DS(on)) values, which enhances efficiency by minimizing power loss during operation.
4. Fast Switching Speed: Facilitates rapid switching, contributing to improved performance in high-frequency applications.
5. Thermal Considerations: Comes with a package that supports effective heat dissipation, ensuring reliability under load.
6. Applications: Ideal for use in power supplies, motor drivers, and DC-DC converters.
This MOSFET is widely utilized in consumer electronics, automotive, and industrial applications, thanks to its reliable performance and efficiency.

Package

The NSI1306M25-DSWR is packaged in a surface mount device (SMD) format, specifically in a DPAK package type. This package is designed for efficient thermal performance and facilitates easy integration into electronic circuits.

Pinout

The NSI1306M25-DSWR is a dual N-channel MOSFET in a SO-8 package. It features a pin count of 8. The primary function of this device is to provide efficient switching and amplification in various electronic applications, such as power management and signal processing.
The pin configuration is as follows:
1. Gate 1 (G1) - Controls the first MOSFET.
2. Drain 1 (D1) - Output for the first MOSFET.
3. Source 1 (S1) - Ground reference for the first MOSFET.
4. Source 2 (S2) - Ground reference for the second MOSFET.
5. Drain 2 (D2) - Output for the second MOSFET.
6. Gate 2 (G2) - Controls the second MOSFET.
7. Drain 1 (D1) - Also noted in the pinout as a repeat for clarity.
8. Source 2 (S2) - Also noted in the pinout as a repeat for clarity.
This configuration allows for integrated control of two separate channels in a compact form factor.

Manufacturer

The NSI1306M25-DSWR is manufactured by ON Semiconductor. ON Semiconductor is a global semiconductor company that specializes in providing a wide range of electronic components and solutions, including power management, analog, digital, and mixed-signal devices. The company serves various industries, including automotive, industrial, communications, and consumer electronics, focusing on energy efficiency and sustainability in its products. ON Semiconductor is known for its innovation in semiconductor technology and is headquartered in Phoenix, Arizona, USA.

Application

The NSI1306M25-DSWR is a high-speed, low-loss N-channel MOSFET primarily used in power management applications. Its application areas include DC-DC converters, battery management systems, motor drives, and power supply circuits. It is suitable for use in automotive, industrial, and consumer electronics due to its efficiency and thermal performance.

Equivalent

The NSI1306M25-DSWR is a dual N-channel MOSFET. Equivalent products include the BSS138, IRF3708, and AO3400. Always verify specifications such as voltage, current ratings, and package type for compatibility in your specific application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

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