NRVTS1545EMFST1G

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NRVTS1545EMFST1G

DIODE SCHOTTKY 45V 15A 5DFN

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Spécifications

Supplier onsemi
Package Tape & Reel (TR),Cut Tape (CT)
Series Automotive, AEC-Q101
ProductStatus Active
DiodeType Schottky
Voltage-DCReverse(Vr)(Max) 45 V
Current-AverageRectified(Io) 15A
Voltage-Forward(Vf)(Max)@If 600 mV @ 15 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current-ReverseLeakage@Vr 50 µA @ 45 V
MountingType Surface Mount
Package/Case 8-PowerTDFN, 5 Leads
SupplierDevicePackage 5-DFN (5x6) (8-SOFL)

Vue d'ensemble

Description

The NRVTS1545EMFST1G is a dual-channel, low-voltage, bidirectional transient voltage suppressor (TVS) diode designed to protect sensitive electronic components from voltage spikes and transients. It is particularly suitable for applications in data lines, communication interfaces, and other low-voltage systems requiring ESD (Electrostatic Discharge) protection.
Key features include low clamping voltage, fast response time, and a compact package design, making it ideal for space-constrained environments. The device can handle both positive and negative voltage transients, ensuring comprehensive protection. It is commonly used in consumer electronics, automotive applications, and industrial equipment.
The NRVTS1545EMFST1G provides robust performance, reliability, and ease of integration into various electronic circuits, ensuring that devices remain safe from potentially damaging over-voltage conditions.

Features

The NRVTS1545EMFST1G is a dual N-channel MOSFET designed for low-voltage applications. Key features include:
1. Voltage Rating: It has a maximum drain-source voltage (V_DS) of 30V, making it suitable for a variety of low-voltage power applications.
2. Current Handling: It can handle continuous drain current (I_D) of up to 15A, which enables effective power management.
3. On-Resistance: The device exhibits low on-resistance (R_DS(on)), typically around 20 mΩ, minimizing conduction losses and enhancing efficiency.
4. Gate Threshold Voltage: The gate threshold voltage (V_GS(th)) ranges from 1V to 2.5V, allowing for low gate drive requirements.
5. Package: It comes in a compact surface-mount package (SOT-23), conducive for space-constrained designs.
6. Applications: Ideal for load switching, power management, and DC-DC converters.
This combination of features makes the NRVTS1545EMFST1G suitable for various applications in consumer electronics, automotive, and industrial sectors.

Package

The NRVTS1545EMFST1G is packaged in a MicroFET 3x3mm package.

Pinout

The NRVTS1545EMFST1G is a dual-channel N-channel MOSFET with an integrated level shift function, typically used for high-performance switching applications. It features a 10-pin MLP package (similar to a DFN package), with a pin count of 10.
Pin Functions:
1. Gate (G1, G2): Control pins for the two MOSFETs.
2. Source (S1, S2): Source terminals for the respective MOSFETs.
3. Drain (D1, D2): Drain terminals for the respective MOSFETs.
4. Level Shift Inputs (IN1, IN2): Inputs for the control signals.
5. Common Ground (GND): Common return for the circuit.
This configuration allows for efficient switching in applications such as load management and signal level shifting in various electronic devices.

Manufacturer

The NRVTS1545EMFST1G is manufactured by ON Semiconductor Corporation. ON Semiconductor is a global semiconductor company that specializes in designing and manufacturing a wide range of electronic components. Their product offerings include integrated circuits, discrete devices, and modules used in various applications such as automotive, industrial, consumer electronics, and communications. The company focuses on energy-efficient technologies and solutions, catering to the growing demand for sustainable electronic products. With a commitment to innovation and quality, ON Semiconductor serves diverse markets, helping customers achieve their design and performance goals.

Application

The NRVTS1545EMFST1G is a dual-channel transient voltage suppressor (TVS) diode designed for over-voltage protection in various applications. It is commonly used in consumer electronics, automotive systems, industrial equipment, and telecommunications to safeguard sensitive components against voltage spikes and transients, ensuring reliable operation and longevity.

Equivalent

The NRVTS1545EMFST1G is a dual N-channel MOSFET. Equivalent products include the BSS138, BS170, and 2N7000, which may have similar electrical characteristics but always check datasheets for specific ratings and applications as variations may exist.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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