NRVBM2H100T3G

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NRVBM2H100T3G

DIODE SCHOTTKY 100V 2A POWERMITE

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  • Mfr. Partie #NRVBM2H100T3G
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  • En stock2626

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Spécifications

Series POWERMITE®
Part Status Active
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 100 V
Current - Average Rectified (Io) 2A
Voltage - Forward (Vf) (Max) @ If 680 mV @ 2 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 20 µA @ 100 V
Mounting Type Surface Mount
Package / Case DO-216AA
Supplier Device Package Powermite
Operating Temperature - Junction -65°C ~ 175°C
Base Product Number NRVBM2

Vue d'ensemble

Description

The NRVBM2H100T3G is a type of N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for high-performance applications. It features low on-resistance and fast switching capabilities, making it suitable for power management and switching applications in various electronics. This component is commonly used in devices such as power supplies, motor drivers, and automotive applications.
Key specifications typically include a maximum drain-source voltage (V_DS), a maximum continuous drain current (I_D), and a low gate threshold voltage (V_GS(th)), which allows it to operate efficiently at lower voltages. The package type is usually a surface-mount option, facilitating easy integration into compact circuit designs.
Overall, the NRVBM2H100T3G is valued for its reliability, efficiency, and thermal performance, making it an essential component in modern electronic systems. For detailed application guidelines and electrical characteristics, refer to the manufacturer's datasheet.

Features

The NRVBM2H100T3G is a N-channel MOSFET designed for efficient power management applications. Key features include:
- V_DS (Drain-Source Voltage): 100V, enabling high-voltage applications.
- I_D (Continuous Drain Current): Up to 30A, suitable for various load requirements.
- R_DS(on) (On-Resistance): Low on-resistance of approximately 30mΩ at V_GS = 10V, which minimizes conduction losses and enhances efficiency.
- Gate Threshold Voltage (V_GS(th)): Typically between 2V and 4V, allowing for effective switching with lower gate drive voltages.
- Package Type: Offered in a TO-220 package, which provides good thermal performance and ease of mounting.
- Applications: Ideal for use in power supplies, motor drivers, and DC-DC converters.
Overall, the NRVBM2H100T3G is designed for high-efficiency switching applications, with robust performance metrics that make it suitable for a range of electronic devices.

Package

The NRVBM2H100T3G is packaged in a SOT-23-3 (Small Outline Transistor) package type.

Pinout

The NRVBM2H100T3G is a N-channel MOSFET from ON Semiconductor designed for high-voltage applications. It features a pin count of 8, packaged in a DPAK (also known as TO-252) package.
The primary functions of the NRVBM2H100T3G include:
1. Switching: It is used for switching applications in power management circuits, allowing for control of high voltages and currents.
2. Amplification: It can amplify signals in electronic circuits.
3. Load Driving: It serves to drive loads in various electronic applications.
The key specifications include a maximum drain-source voltage (V_DS) of 100V and a continuous drain current (I_D) rating of 50A, making it suitable for various power conversion and control applications.

Manufacturer

The NRVBM2H100T3G is manufactured by ON Semiconductor, a global supplier of semiconductor components. ON Semiconductor specializes in providing a wide range of products, including analog, digital, and mixed-signal semiconductors, as well as power management and connectivity solutions. The company serves various industries, including automotive, industrial, communications, and consumer electronics, focusing on energy-efficient technologies and innovative solutions for efficient power management. ON Semiconductor is known for its commitment to sustainability and aims to provide high-performance products that meet the growing demand for energy efficiency across multiple applications.

Application

NRVBM2H100T3G is a low-noise voltage regulator commonly used in applications such as consumer electronics, telecommunications, and automotive systems. Its primary functions include powering sensitive analog components, ensuring stable voltage supply in portable devices, and supporting precision instrumentation. It is ideal for applications requiring minimal noise and high stability, such as audio devices, RF circuits, and medical equipment.

Equivalent

The NRVBM2H100T3G chip is a dual N-channel MOSFET. Equivalent products include the IRF3205, AO3400, and BS170. Always verify specifications such as voltage, current ratings, and package types before substituting components to ensure compatibility in your application.

Expédition

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Référence des frais d'expédition (DHL/FedEx):

DHL: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 2 à 5 jours ouvrables.

FedEx: Les frais d'expédition varient de 25 à 40 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

UPS: Les frais d'expédition vont de 25 à 45 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

TNT: Les frais d'expédition varient de 25 à 65 $ (0,5 kg), avec un délai de livraison estimé de 3 à 7 jours ouvrables.

EMS: Les frais d'expédition varient de 30 à 50 $ (0,5 kg), avec un délai de livraison estimé de 7 à 15 jours ouvrables.

Courrier aérien enregistré: Le coût d'expédition est de 2 à 4 $ (0,1 kg), avec un délai de livraison estimé de 5 à 20 jours ouvrables.

Paiements

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